Infrared detection picture element structure, manufacturing method therefor and hybrid imaging device
A technology of pixel structure and infrared detection, which is applied in the direction of electrical components, electric radiation detectors, radiation pyrometry, etc., can solve the problems of low sensitivity of imaging devices, degradation of imaging quality, inconsistent correspondence of single imaging units, etc., to improve sensitivity , Improving the effect of image quality
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[0031] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be further described below in conjunction with the accompanying drawings. Of course, the present invention is not limited to this specific embodiment, and general replacements known to those skilled in the art are also covered within the protection scope of the present invention.
[0032] The infrared detection pixel structure of the present invention utilizes an upper electrode structure and a lower electrode structure with one end fixed and the other end not fixed, the upper electrode structure of the upper electrode structure and the lower electrode structure of the lower electrode structure are arranged alternately, on the upper electrode structure With an infrared sensitive structure, the infrared sensitive structure is used to absorb infrared light and produce thermal deformation to cause relative displacement of the upper electrode stru...
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