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Terahertz antenna integrating transceiver, manufacturing method and terahertz measurement system

A measurement system, terahertz technology, applied to antennas, loop antennas, measurement devices, etc., can solve problems affecting practicality, increase system volume, etc., and achieve the effect of great flexibility

Active Publication Date: 2018-09-28
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This design of sending and receiving will increase the volume of the system and affect its practicability to a certain extent

Method used

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  • Terahertz antenna integrating transceiver, manufacturing method and terahertz measurement system
  • Terahertz antenna integrating transceiver, manufacturing method and terahertz measurement system
  • Terahertz antenna integrating transceiver, manufacturing method and terahertz measurement system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0056] The terahertz antenna is as image 3 As shown, on a 450 μm thick semi-insulating GaAs substrate 3001, a low-temperature GaAs material layer 3002 with large dark resistance, high carrier mobility, and carrier lifetime in the order of fs is grown, and the material growth of the low-temperature GaAs material layer 3002 The temperature is 250°C, the annealing temperature is 500°C, the annealing time is 10 minutes, and the thickness is 1 μm-2 μm; then, a Ni / Ge / Au alloy or Ti / Pt / Au electrode 3003 with a thickness of 500 nm is deposited by electron beam evaporation, The shape of the electrode 3003 is the same as shown in Figure 1(a), Figure 1(b), Figure 1(c), Figure 1(d) and Figure 1(e), with three, four, eight, twelve The antenna structure of the same electrode is annealed to form ohmic contact with the low-temperature GaAs material layer 3002; finally, SiO with antireflection and insulation protection is grown in the central gap region of the electrode 2 / Si 3 N 4 Insulat...

Embodiment 2

[0063] The terahertz antenna is as image 3 As shown, on an intrinsic InP substrate 3001, an InGaAs:Be / InAlAs multi-quantum well layer material layer 3002 with large dark resistance and high carrier mobility is grown for about 100 cycles, and the thickness of the InAlAs layer is 7- 9nm, the thickness of the InGaAs:Be layer is between 8-14nm, and the total thickness is 1μm-2μm; then use the electron beam evaporation process to deposit a Ni / Ge / Au alloy or Ti / Pt / Au electrode 3003 with a thickness of 500nm, the electrode The shape of 3003 is the same as that shown in Figure 1(a), Figure 1(b), Figure 1(c), Figure 1(d) and Figure 1(e), with three, four, eight and twelve identical The antenna structure of the electrode is annealed to form an ohmic contact with the material layer 3002; finally, SiO with antireflection and insulation protection functions is grown in the gap region of the electrode 2 / Si 3 N 4 Insulation film 3004.

[0064] For the structure of Fig. 1(a), W=450 μm, ...

Embodiment 3

[0070] The antenna structures involved in Embodiments 1 and 2 may be antenna array structures, where the single antenna 2020 may be any multipole antenna structure, and the antenna structures may be consistent or inconsistent. Such as figure 2 As shown, each individual antenna 2020 has the same structure.

[0071] Using the ring-distributed multi-pole terahertz antenna structure, a terahertz spectral measurement system with two different radiation modes, pulse and continuous, can be built. The most important feature of the measurement system is that the transmission and reception of terahertz radiation signals can be realized simultaneously through a circular distributed multipole antenna.

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Abstract

The invention relates to a transmit-receive Terahertz antenna which comprises a Terahertz radiation material and a multi-electrode antenna which is distributed in such a way that an annular shape is formed, the multi-electrode antenna consists of more than three metal electrodes that form an annular symmetric distribution structure, the multi-electrode antenna which is distributed in such a way that the annular shape is formed is positioned on an upper surface of the Terahertz radiation material and is parallel to a surface of the Terahertz radiation material, a central gap zone is formed via enclosure of the more than three metal electrodes, and an illumination zone is formed on the Terahertz radiation material and is positioned at the central gap zone. The invention also relates to a manufacturing method for the Terahertz antenna and a Terahertz measurement system. The antenna put forward in the invention can receive and transmit Terahertz radiation synchronously.

Description

technical field [0001] The invention relates to a measurement system of a terahertz (THz) frequency range, in particular to a terahertz antenna with integrated transceiver, a manufacturing method thereof, and a terahertz measurement system. Background technique [0002] In recent years, people have paid attention to terahertz (Terahertz, 1THz=10 12 Hz) basic research and practical application have done a lot of work. The challenge of terahertz is: for high-speed electronic devices, 0.3THz is basically the upper limit of its bandwidth; for optical devices, light sources with light frequency less than 10THz (or wavelength longer than 30 microns) are also difficult to use in practice. This is what people call the "terahertz gap": photonics and electronics don't bridge very well at their technological limits (the terahertz band). However, this band has very important applications in many fields, such as monitoring and spectral analysis in the pharmaceutical industry, medical i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01Q1/36H01Q21/00H01Q7/00G01N21/3581
CPCG01N21/3581H01Q1/36H01Q7/00H01Q21/00
Inventor 林琦林中晞苏辉
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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