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Treatment apparatus

A technology for processing devices and processing chambers, which is applied in the manufacture of discharge tubes, electrical components, semiconductors/solid-state devices, etc., can solve the problem that heat dissipation measures cannot be applied to large processing containers, achieve good temperature control efficiency, and improve temperature regulation efficiency , The effect of easy disassembly

Active Publication Date: 2016-09-21
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, the anti-radiation measures of Patent Document 1 cannot be applied to large-scale processing containers.

Method used

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no. 1 approach

[0034] figure 1 It is a cross-sectional view showing a schematic configuration of a plasma etching apparatus which is a first embodiment of the processing apparatus of the present invention. figure 2 is enlarged figure 1 Sectional view of the main part. Such as figure 1 As shown, the plasma etching apparatus 200 is configured as a capacity-coupled parallel plate plasma etching apparatus that etches, for example, a glass substrate (hereinafter, simply referred to as "substrate'") S for an FPD as an object to be processed. In addition, examples of the FPD include a liquid crystal display (LCD), an electroluminescence (Electro Luminescence; EL) display, a plasma display panel (PDP), and the like.

[0035] This plasma etching apparatus 200 has a processing container 101 formed in a square tube shape made of aluminum whose inside is anodized (aluminum anodized). The main body (container body) of the processing container 101 is composed of a bottom wall 101a and four side walls...

no. 2 approach

[0069] Next, refer to Figure 10 A plasma etching apparatus according to a second embodiment of the processing apparatus of the present invention will be described. Figure 10 is an enlarged representation of the first embodiment with figure 2 Corresponding drawings of the cross section of the main part of the processing container 101. In addition, in the following description, the difference from the first embodiment will be mainly described, and the description of the same configuration as the first embodiment in the second embodiment will be omitted.

[0070] Such as Figure 10 As shown, the heat dissipation suppressing unit 201 of the plasma etching apparatus of this embodiment includes an inner plate 202 close to the side wall 101 b and an outer plate 203 disposed outside the inner plate 202 . Thereby, the air heat insulation part becomes the double heat insulation structure of the inner heat insulation part 180a and the outer heat insulation part 180b. The inner hea...

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Abstract

To provide a treatment apparatus having a heat radiation preventing structure applicable also to a large-sized treatment container, and being easy to handle without causing particles. A heat radiation suppressing unit 105 is arranged along a sidewall 101b to cover a part or substantially the whole surface of an external wall surface of each sidewall 101b of the treatment container 101. The heat radiation suppressing unit 105 is constituted of a plurality of plate members 106, and each plate member 106 is mounted to a spacer 107, disposed on the external wall surface of the sidewall 101b of the treatment container 101. Each plate member 106 is mounted spaced apart from the treatment vessel 101 by interposing the spacer 107, and an air heat insulating part 180 is formed in between.

Description

[0001] This application is a divisional application of an application whose filing date is February 18, 2011, application number is 201110042001.9, and the title of the invention is "processing device". technical field [0002] The present invention relates to a processing device, and more specifically, to a structure for suppressing heat dissipation of a processing container used in a processing device that performs plasma processing or the like. Background technique [0003] In a manufacturing process of an FPD (Flat Panel Display), various plasma treatments such as plasma etching, plasma ashing, and plasma film formation are performed on a glass substrate for an FPD. As an apparatus for performing such plasma processing, a parallel plate type plasma processing apparatus, an inductively coupled plasma (ICP: Inductively Coupled Plasma) processing apparatus, and the like are known. [0004] Here, in various plasma processing apparatuses, the temperature in the processing cha...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32
CPCH01J37/321H01J37/32522H01L21/3065
Inventor 笠原稔大
Owner TOKYO ELECTRON LTD
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