Device for preparing ion probe indium target and method for preparing ion probe indium target

Abstract

The invention discloses an apparatus for preparing an ion probe indium target and a preparation method of the ion probe indium target. The apparatus includes a target support, a heating mechanism for heating the target support, a pressure rod, a sliding rod, an air cylinder, a first support frame for supporting the air cylinder, a second support frame for supporting the pressure rod and a third support frame for supporting the sliding rod. One end of the pressure rod is movably connected to the top of the second support frame while the other end is connected to the air cylinder. The sliding rod and the heating mechanism are both arranged below the pressure rod. One end of the sliding rod faces to the pressure rod while the other end faces to the heating mechanism. The air cylinder applies pressure onto the pressure rod longitudinally, thereby driving the sliding rod to apply a pressure onto the heating mechanism longitudinally. The apparatus can increase the micron resolution ratio from more than 5 [mu]m to less than 1 [mu]m, thereby achieving measurement on age and microelements of a narrow metamorphic edge (less than 5 [mu]m) of low-grade metamorphic zircon. The surface flatness of prepared indium target is less than 10 [mu]m and the indium target can satisfy a requirement on flatness during ion probe detection.

Description

Technical field [0001] The invention relates to the technical field of ion probes, and in particular to a method for preparing an ion probe indium target device and an ion probe indium target. Background technique [0002] The ion probe (SIMS for short) has the advantages of high quality resolution, high sensitivity and high analysis accuracy. Its analysis beam spot is small (generally less than 20 microns), and the sample consumption is low (10-9 grams). The analysis field has irreplaceable technical advantages and is widely used in the fields of earth science, celestial geology and environmental geology. [0003] Ion probe analysis technology mainly includes two important links: sample preparation and instrument test analysis. At present, in the preparation of zircon resin sample targets at home and abroad, in order to observe the internal structure of zircon, the sample target needs to be polished and polished. The zircon particles are polished out of the center, and the zircon...

AI Technical Summary

Problems solved by technology

[0005] Since the conventional beam spot of the ion probe U-Pb age test is ~20 microns, the conventional beam spot is far larger than the width of the narrow metamorphic edge, and it is completely impossible to analyze and determine the age of the metamorphic zircon metamorphic edge

At present, the highest resolution for dating is a small beam spot (~5 microns), but through the three-dimensional measurement of the target surface of the zircon resin sample, it is found that the contact surface between the zircon particles on the target surface and the resin is a slope, and the height difference is usually 5 Even if it is measured with a small beam spot of 5 microns, it will hit the mixture of zircon slope and resin, which cannot be analyzed

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