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Frame, diode comprising same and processing technology of diode

A diode and frame technology, applied in the field of photovoltaic equipment, to achieve the effect of ensuring heat dissipation efficiency, improving electrical performance, and optimal use stability

Active Publication Date: 2016-08-24
YANGZHOU YANGJIE ELECTRONIC TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of the above problems, the present invention proposes a frame with exquisite structure, good use effect and long service life, which can effectively avoid problems such as local overheating and uneven heat dissipation during use, and has excellent structural stability. The diode of the frame and the processing technology of the diode

Method used

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  • Frame, diode comprising same and processing technology of diode
  • Frame, diode comprising same and processing technology of diode
  • Frame, diode comprising same and processing technology of diode

Examples

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Embodiment Construction

[0038] The invention is like Figure 1-11 As shown, it includes a positive plate 1 for connecting a jumper 3 and a negative plate 2 for connecting a chip 4;

[0039] The negative plate 2 includes a wiring board 21 and a chip board 22 that are connected as a whole. A groove 23 is formed between the wiring board 21 and the chip board 22, and the cross section of the groove 23 is small in the bottom and large in the top. ;

[0040] The chip board 22 has a chip area for supporting the chip 4, the outer side of the chip area is provided with a groove 24, the outer edge of the chip board 22 is stepped, and the outer side of the chip board 22 is facing Depressed inside.

[0041] The thickness of the positive electrode plate 1 and the negative electrode plate 2 are both less than 0.6 mm. In this case, the finished product and heat transfer efficiency were fully considered, and the thickness of the positive and negative plates was greatly reduced (to less than half of the existing technolo...

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Abstract

The invention relates to a frame, a diode comprising the same and a processing technology of the diode, and proposes a frame which is exquisite and stable in structure, high in application effect and long in service lifetime and by which the problems of local overheating, non-uniform heat dissipation and the like can be effectively prevented during use, the diode comprising the frame and the processing technology of the diode. The frame comprises a positive plate and a negative plate, wherein the positive plate is connected with a jumper, the negative plate is connected with a chip and comprises a wiring board and a chip board which are connected integrally, a first groove is formed between the wiring board and the chip board, the cross section of the first groove is in a shape with a small lower part and a large upper part, a chip region is arranged on the chip board and is used for bearing the chip, a second groove is formed in the outer side of the chip region, the outer edge of the chip board is step-shaped, and the outer side surface of the chip board is internally recessed. By the frame, the cooling synchronism and the cooling efficiency of two paths are effectively ensured on the condition that the thicknesses of the negative plate and the positive plate are simultaneously reduced and with the combination of the original size of the jumper and the cooling capability.

Description

Technical field [0001] The present invention relates to the field of photovoltaic equipment, in particular to the improvements proposed for the diode module and its internal structure and processing technology. Background technique [0002] With the vigorous development of photovoltaic diodes, there are more and more types of junction boxes, coupled with cost constraints, making people's performance requirements for diodes more and more stringent. Traditional products are mainly used by axial and TO-263 series products. Due to the thickness limitation of the product body, it has a certain hindering effect on the cost reduction of the junction box, which has become an urgent technical problem for those skilled in the art. [0003] However, due to the current diameter of the positive and negative electrode leads of the axial diode being 1.22mm~1.3mm, the TO-263 series products have only two 1.27mm copper wires for heat dissipation at the positive pole, so the heat transfer rate is sl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/13H01L23/31H01L21/50
CPCH01L21/50H01L23/13H01L23/31H01L2224/40245
Inventor 陈晓华王毅
Owner YANGZHOU YANGJIE ELECTRONIC TECH CO LTD
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