Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Ion beam detection device

A detection device and ion beam technology, applied in the direction of circuits, discharge tubes, electrical components, etc., can solve the problems of high cost of detection equipment, poor work stability, low detection accuracy, etc., achieve good water cooling effect, low cost, easy disassembly and maintenance convenient effect

Active Publication Date: 2016-08-24
BEIJING ZHONGKEXIN ELECTRONICS EQUIP
View PDF6 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The existing ion beam detection device has low detection accuracy, poor working stability, low vacuum degree during motion, and high cost of detection equipment. In order to solve the above problems, a new type of ion beam detection device is needed

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ion beam detection device
  • Ion beam detection device
  • Ion beam detection device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0009] Such as figure 1 As shown, the ion beam current detection module (1), the pre-filter light barrier module (2), and the support plate (3), are characterized in that: the ion beam current detection module (1) and the pre-filter light barrier module (2) are assembled on On the support plate (3), the ion beam current detection module is driven by a linear cylinder, and a vacuum bellows is used to ensure vacuum tightness, thereby completing the telescopic movement of the Faraday cup. The pre-filter grating module (2) is also driven by a linear cylinder, and adopts differential pumping to ensure vacuum tightness, so as to complete the sorting of the two slits of the pre-filter grating. The ion beam detection device can not only detect gas element ions, but also detect special metal ions.

[0010] Such as figure 2 As shown, the ion beam detection module (1) is composed of a Faraday cup (11), a front suppression graphite electrode (12), a main shaft (13), a vacuum bellows (1...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an ion beam detection device. The ion beam detection device comprises an ion beam detection module, a pre-filtering diaphragm module, a supporting plate, and the like. The ion beam detection module is composed of a Faraday cup, a driving shaft, vacuum bellows and a driving air cylinder; the ion beam detection module is designed to detect gas element ions and detect special metal ions; the entrance of the Faraday cup is provided with an inhibition graphite electrode which can effectively prevent external electrons from entering the Faraday cup and inhibit electrons from overflowing from the Faraday cup; the beam detection module can accurately detect ion beams; the pre-filtering diaphragm module is composed of a filtering graphite diaphragm plate, a moving main shaft, a differential air extraction module and a driving air cylinder; the pre-filtering diaphragm module can pre-filter ions entering the Faraday cup; and two kinds of filtering slits are designed on the filtering graphite diaphragm plate. With the ion beam detection device adopted, the quality of the ions entering the Faraday cup can be effectively improved, the measurement accuracy of the Faraday cup can be effectively improved, and ion implantation process debugging can be facilitated. The invention relates to an ion implantation device and belongs to the semiconductor manufacturing field.

Description

technical field [0001] The invention relates to a semiconductor device manufacturing control system, in particular to an ion beam detection device. Background technique [0002] With the improvement of integrated circuit technology, higher requirements are put forward for ion implantation equipment. There are more types of ion implantation elements, and the application range of ion implantation equipment is wider. It can be applied to various material modification and semiconductor device manufacturing. And high-power devices such as SiC electronic device manufacturing and other fields, and require ion implantation equipment with a high degree of automation, simple and convenient operation, and stable work. [0003] The existing ion beam detection device has low detection accuracy, poor working stability, low vacuum degree during motion, and high cost of detection equipment. In order to solve the above problems, a new type of ion beam detection device is needed. Contents o...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/244
Inventor 李晨冉梁旭
Owner BEIJING ZHONGKEXIN ELECTRONICS EQUIP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products