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Light-emitting diode (LED) epitaxial structure and fabrication method thereof

A technology of epitaxial structure and epitaxial layer, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of InGaN LED luminous efficiency decline, etc., and achieve the effect of reducing electron escape and speed

Inactive Publication Date: 2016-08-10
FOCUS LIGHTINGS SCI & TECH
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Problems solved by technology

However, under high current drive, the luminous efficiency of InGaN LED will drop significantly

Method used

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  • Light-emitting diode (LED) epitaxial structure and fabrication method thereof

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preparation example Construction

[0030] Specifically, a method for preparing an LED epitaxial structure of the present invention includes the following steps:

[0031] Step 1: Place the sapphire substrate on the carrier plate in the MOCVD reaction chamber, and treat it at a high temperature of 1080°C to 1100°C for 5-10 minutes, wherein the sapphire substrate can be a flat sheet or a patterned substrate.

[0032] Step 2: Under the conditions of 500-550° C. and 200-500 Torr, grow a 10-30 nm GaN layer or AlInGaN layer as a buffer layer on the substrate, 1 Torr=133.3 Pa.

[0033] Step3: grow a 2-4um uGaN layer on the buffer layer under the conditions of 1040-1100°C and 100-300 Torr.

[0034] Step4: Under the conditions of 1040-1070°C and 100-200 Torr, grow a 2-4um N-type semiconductor layer on uGaN.

[0035] Step5: Under the conditions of 750-900°C and 200-300 Torr, grow an n-layer AlInGaN layer with a thickness of 1-20 nm on the N-type semiconductor layer as an electron deceleration layer, wherein 2≤n≤10. , th...

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Abstract

The invention provides a light-emitting diode (LED) epitaxial structure. The LED epitaxial structure comprises a substrate and a semiconductor epitaxial layer, wherein the semiconductor epitaxial layer is arranged on the substrate and comprises an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer, and an electron speed reduction layer is further arranged between the light-emitting layer and the N-type semiconductor layer, is used for reducing escaped electrons and is formed by laminating n layers of AlInGaN with thickness of 1-20 nanometers. The electron speed reduction layer is arranged between the light-emitting layer and an N-type semiconductor, is used for reducing the escaped electrons and is formed by laminating n layers of AlInGaN with the thickness of 1-20 nanometers, and thus, the electron speed can be effectively reduced.

Description

technical field [0001] The invention provides an LED epitaxial structure and a preparation method thereof. Background technique [0002] A light-emitting diode (Light-Emitting Diode, LED) is a semiconductor electronic component capable of emitting light. This electronic component appeared as early as 1962. In the early days, it could only emit red light with low luminosity. Later, other monochromatic light versions were developed. Today, the light that can be emitted has covered visible light, infrared rays and ultraviolet rays, and the luminosity has also increased to a considerable extent. of luminosity. And the use is also used as indicator lights, display panels, etc. from the beginning; with the continuous advancement of technology, light-emitting diodes have been widely used in displays, TV lighting decoration and lighting. [0003] UV Light Emitting Diode (UV-LED) is a solid-state semiconductor device that can directly convert electrical energy into ultraviolet ligh...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/14H01L33/02H01L33/00
CPCH01L33/145H01L33/0062H01L33/02
Inventor 冯猛陈立人刘恒山
Owner FOCUS LIGHTINGS SCI & TECH
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