Photoresist residue cleaning liquid

Abstract

The invention discloses a cleaning liquid which does not contain fluoride and hydroxylamine and is used for removing photoresist etching residue, and constituents thereof. The low-etching cleaning liquid which does not contain the fluoride and the hydroxylamine and is used for removing the photoresist etching residue comprises (a) hydramine; (b) solvent; (c) water; (d) phenols; (e) alkynol ethoxyl compound; (f) hydrazine and derivatives thereof; and (g) polyhydric alcohols. With the low-etching cleaning liquid which does not contain the fluoride and the hydroxylamine and is used for removing the photoresist etching residue, cross-linked and hardened photoresist subjected to hard baking, dry etching, ashing and plasma injection to cause complicated chemical change can be rapidly removed, the photoresist residue on a metal line, a through hole and a metal gasket wafer can be removed, meanwhile, no attack is generated to a substrate, such as metal aluminum, metal copper and non-metal silicon dioxide. The cleaning liquid disclosed by the invention has favorable application prospect in the field of semiconductor wafer cleaning and the like.

Description

technical field [0001] The invention discloses a photoresist residue cleaning solution, in particular to a cleaning solution that does not contain hydroxylamine and fluoride. Background technique [0002] In the manufacturing process of semiconductor components, the coating, exposure and imaging of photoresist layers are necessary process steps for the pattern manufacturing of components. Residues of photoresist material need to be completely removed at the end of patterning (ie, after photoresist coating, imaging, ion implantation, and etching) before proceeding to the next process step. Usually, dozens of photolithography processes are used in the manufacturing process of semiconductor devices. Due to the complex chemical reaction with the photoresist caused by the ions and free radicals of the plasma etching gas, the photoresist is rapidly cross-linked and hardened with inorganic substances, making the photoresist The layer becomes less soluble and thus more difficult to...

AI Technical Summary

Problems solved by technology

This type of cleaning solution that does not contain hydroxylamine or fluoride not only solves the problems of single source of hydroxylamine and safety and environmental protection, but al

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