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A chip temperature sensor and its preparation process

A technology of temperature sensor and preparation process, which is applied to thermometers, thermometers and instruments using electric/magnetic elements that are directly sensitive to heat, to achieve the effects of high measurement accuracy, stable measurement accuracy, and small volume

Active Publication Date: 2018-08-31
LASER FUSION RES CENT CHINA ACAD OF ENG PHYSICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there is no semiconductor thermometer on the market with an accuracy of 1mK that can be used to measure the local temperature of the surface of an object.

Method used

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  • A chip temperature sensor and its preparation process
  • A chip temperature sensor and its preparation process
  • A chip temperature sensor and its preparation process

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0038] see figure 1 and figure 2As shown, this embodiment provides a chip-type temperature sensor 100, the temperature sensor 100 is in the form of a sheet, the length and width of the temperature sensor 100 are not greater than 1 mm, the thickness of the temperature sensor 100 is not greater than 550 μm, and the temperature sensor 100 is in the form of a sheet Structure, and small size, so it can be directly attached to any part of the surface of the object to be measured, used to measure the local temperature of the surface of the object, and the surface temperature of objects of different shapes. The temperature sensor 100 includes a substrate 101 , a germanium film (Ge film) 102 , and interdigital electrodes 110 . The germanium film 102 is a temperature-sensitive material and is the core part of the temperature sensor 100. The germanium film 102 is located on the first surface 101a (ie, the upper surface) of the substrate 101. The germanium film 102 has a second surface ...

no. 2 example

[0050] see image 3 and Figure 4 As shown, the provided chip temperature sensor 200 has substantially the same structure as the chip temperature sensor 100 provided in the first embodiment. The temperature sensor 200 includes a substrate 201 , a germanium film 202 , and interdigital electrodes 210 . The germanium film 202 is located on the first surface 201c of the substrate 201 , and the interdigital electrodes 210 are located on the second surface 202a of the germanium film 202 .

[0051] The difference between the two is that in this embodiment, the substrate 201 is single crystal silicon with an oxide layer, the substrate 201 includes a silicon layer 201a and a silicon oxide layer 201b stacked from bottom to top, and the thickness of the silicon layer 201a is 300-500 μm. The thickness of the silicon oxide layer 201b is 0.2-0.4 μm. Preferably, the thickness of the silicon layer 201 a is 500 μm, the thickness of the silicon oxide layer 201 b is 0.4 μm; the thickness of th...

no. 3 example

[0057] see Figure 5 As shown, the structure of the chip temperature sensor 200a provided in this embodiment is substantially the same as that of the chip temperature sensor 200 provided in the second embodiment, the difference between the two is that in this embodiment, the thickness of the silicon layer 201a is 400 μm , the thickness of the silicon oxide layer 201b is 0.3 μm. The germanium film 202 has a thickness of 1 μm.

[0058] The interdigital electrode 210 includes a titanium layer 205 and a gold layer 206 stacked from bottom to top. The thickness of the titanium layer 205 is 0.03 μm, and the thickness of the gold layer 206 is 0.2 μm. The interdigital width of the interdigital electrode 210=interdigital Pitch = 5 μm. The Ti / Au electrode of the thin film is an interdigitated structure, and the interdigital width and interdigital spacing are both 5um. The reason for doing this is that the germanium film 202 is an intrinsic semiconductor, and its resistance is very lar...

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Abstract

The invention provides an SMD temperature sensor and a preparation technology therefor, and belongs to the field of temperature meters. The temperature sensor comprises a substrate, a germanium film located on the substrate, and an interdigital electrode located on the germanium film, wherein two electrodes of the interdigital electrode are respectively connected with one wire. The technology comprises the steps: preparing a high-purity germanium film on the surface through employing superhigh background vacuum conditions and the magnetron sputtering technology of high-purity argon and a high-purity germanium target, wherein the high-purity germanium film serves as a temperature-sensitive material; preparing the interdigital electrode on the surface of the germanium film, so as to reduce the resistance of the germanium film; finally leading out a wire from the interdigital electrode, and enabling the wire to serve as an output signal lead of the temperature sensor. The temperature sensor is shaped like a piece, and the length and width of the temperature sensor are not greater than 1mm. The thickness of the temperature sensor is not greater than 550 microns, and the size of the temperature sensor is small, so the temperature sensor can be directly pasted at any part of the surface of a to-be-detected object. Through the measurement of the resistance of the germanium film, the temperature sensor can be used for measuring the quick change of the local temperature of the surface of the object, is high in measurement precision, and is stable.

Description

technical field [0001] The invention relates to the field of temperature sensors, in particular to a patch temperature sensor and a preparation process thereof. Background technique [0002] A thermometer is a tool that can accurately judge and measure temperature. According to different purposes, people have designed and manufactured many kinds of thermometers, mainly including: thermometers designed by utilizing the phenomena of thermal expansion and contraction of solids, liquids, and gases affected by temperature, For example, mercury thermometers; thermometers designed according to the pressure of gas (or steam) changing due to different temperatures under constant volume conditions; thermometers designed according to the effect of thermoelectric effect; and thermometers designed according to the change of resistance to temperature, For example semiconductor thermometers. [0003] Although there are various types of thermometers on the market, they are generally relati...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01K7/22
CPCG01K7/223
Inventor 彭丽萍李兆国张继成吴卫东湛治强罗跃川樊龙黎维华王新明王雪敏沈昌乐蒋涛闫大伟
Owner LASER FUSION RES CENT CHINA ACAD OF ENG PHYSICS
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