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Flexible self-support graphene conductive thin film with microstructure pattern on surface and preparation method of flexible self-support graphene conductive thin film

A technology of conductive film and microstructure, applied in the direction of conductive layer on insulating carrier, cable/conductor manufacturing, circuit, etc., can solve the problem of low-cost, high-efficiency large-scale manufacturing of difficult-to-pattern graphene film, and the inability to realize flexible graphene Conductive film preparation and other issues, to achieve the effect of low cost, convenient operation, and less experimental steps

Active Publication Date: 2016-07-06
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, these methods are serial processing methods, and it is difficult to achieve low-cost, high-efficiency, and large-scale manufacturing of patterned graphene films, and the prepared graphene films need to be on a certain substrate, which cannot achieve self-supporting patterning Preparation of Flexible Graphene Conductive Films

Method used

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  • Flexible self-support graphene conductive thin film with microstructure pattern on surface and preparation method of flexible self-support graphene conductive thin film
  • Flexible self-support graphene conductive thin film with microstructure pattern on surface and preparation method of flexible self-support graphene conductive thin film
  • Flexible self-support graphene conductive thin film with microstructure pattern on surface and preparation method of flexible self-support graphene conductive thin film

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Effect test

Embodiment 1

[0036] Example 1: Preparation of flexible self-supporting graphene conductive film with hole array pattern

[0037](1) According to the improved Hummers method (document ACSNano4 (8): 4806 (2010), Improvedsynthesisofgrapheneoxide), with graphite as raw material, the graphene oxide aqueous solution that preparation concentration is 1.5mg / ml, wherein the size of graphene oxide is in 100nm~ 5um; prepare a DMF solution of nitrocellulose with a concentration of 5wt%

[0038] (2) Using a silicon wafer with a hole array pattern as a master template (where the hole diameter is 30um, the hole depth is 30um, and the hole spacing is 30um), the nitrocellulose solution is filled into the master template, and further vacuum-dried at 65 degrees Celsius 3h, the nitrocellulose film was obtained; the nitrocellulose was peeled off from the master template to obtain a nitrocellulose film with a column microstructure as a substrate.

[0039] (3) The nitrocellulose substrate with microstructure is...

Embodiment 2

[0042] Embodiment 2: the preparation of the flexible self-supporting graphene film of stripe array

[0043] (1) According to the improved Hummers method (document ACSNano4(8):4806(2010), Improvedsynthesisofgrapheneoxide), graphite is used as raw material to prepare a graphene oxide aqueous solution with a concentration of 3mg / ml, wherein the size of graphene oxide is 100nm~5um ; Prepare a DMF solution of 7.5 wt% nitrocellulose

[0044] (2) Using the PDMS film with a stripe array structure on the surface as the master template (where the bottom width of the stripes is 300um, the height is 100um, and the spacing is 300um), the nitrocellulose solution is filled into the master template, and further vacuum-dried at 90 degrees Celsius After 2.5 hours, a nitrocellulose film was obtained; the nitrocellulose was peeled off from the master template to obtain a nitrocellulose film with a hole array as a substrate.

[0045] (3) The nitrocellulose substrate with microstructure was subjec...

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Abstract

The invention discloses a flexible self-support graphene conductive thin film with a microstructure pattern on the surface and a preparation method of the flexible self-support graphene conductive thin film. The preparation method comprises the following steps of filling a cellulose nitrate solution in a female template with the microstructure patter on the surface, drying and stripping the female template to obtain a cellulose nitrate thin film with a reverse microstructure as a substrate; carrying out plasma surface processing on the substrate; filling a graphene oxide solution in the substrate and drying graphene oxide solution to form a film; placing the obtained graphene oxide thin film in hydroiodic acid aqueous solution for heating and reduction; and removing the cellulose nitrate thin film to obtain the flexible self-support graphene conductive thin film with the same microstructure pattern as the female template. The method has the advantages of simplicity in preparation, convenience in operation, simplicity in device and process requirements, cheap raw material and low cost, and industrial production at a large scale can be achieved. The prepared self-support graphene film is high in toughness and high in conductivity, the microstructure pattern on the surface is adjustable, and the self-support graphene film is expected to be used for aspects such as flexible electronics, flexible display, a wearable sensing device and an energy storage device.

Description

technical field [0001] The invention belongs to the technical field of graphene material preparation, in particular to a preparation method of a flexible self-supporting graphene conductive film with a microstructure pattern on the surface. Background technique [0002] Graphene materials have excellent electrical, mechanical, and chemical properties. Microstructure-patterned flexible graphene conductive films have great potential application value in the fields of flexible microelectronics, optoelectronics, sensing, and energy storage. For example, flexible graphene conductive films patterned with microstructures can effectively improve the detection sensitivity of graphene flexible sensors. The current specific device fields such as flexible thin film solar cells, flexible electrochemical memories, and flexible displays are competing to use patterned flexible graphene electrodes to replace traditional electrode patterns. Therefore, achieving high-efficiency, low-cost, and...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B13/00H01B5/14C01B31/04H01G11/32H01L31/18
CPCH01B5/14H01B13/00H01G11/32H01L31/18Y02P70/50
Inventor 徐华路一飞项建新顾忠泽
Owner SOUTHEAST UNIV
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