Weavable all-carbon memory memory, its preparation method and application
A memory and memory technology, applied in the field of new electronic devices and preparations, can solve the problems of low device switching and cannot meet the multiple reading and writing requirements of wearable memory storage devices, and achieve long switch life, good flexibility, and high switching ratio Effect
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[0040] Another aspect of the present invention provides a preparation method for preparing the woven all-carbon fiber memory storage device. In a typical embodiment, the preparation method includes: using graphene oxide powder as raw material, forming Acidic graphene oxide aqueous solution, wrap graphene oxide on the surface of flexible carbon nanotube fibers by solution impregnation, reduce graphene oxide by heat treatment, and finally cross weave the obtained functionalized carbon fiber tube fibers and connect them Electrodes, get weavable full carbon memory storage.
[0041] The memory storage device involved in the invention has high switching ratio, fast switching speed, long switching life, good device reproducibility, simple preparation process and less requirements on preparation equipment.
[0042] Further, see figure 1 , as a preferred embodiment of the present invention, it can use commercial graphene oxide powder (A) as raw material, add water (B), inorganic acid ...
Embodiment 1
[0054] Example 1 Preparation of acidic graphene oxide: Add 3.2 mg of commercial graphene oxide as a starting material to 4 ml of deionized water, and add 50 ul of 97% concentrated HNO 3 The pH value of the solution was adjusted to 1, and then the obtained solution was placed in an ultrasonic pool with a power of 300W for 30 minutes to obtain acidic graphene oxide with a concentration of 0.8 mg / ml at pH=1. then follow figure 1 The method in the technical route obtains a woven all-carbon memory storage device, and the morphology of graphene wrapped in carbon nanofibers is as follows: Figure 4 The switching ratio and threshold voltage of the device are shown in Table 1.
[0055] Table 1: Properties of memory devices prepared with 0.8 mg / ml starting material in Example 1
[0056] Sample serial number
Embodiment 2
[0057] Example 2 Preparation of acidic graphene oxide: Add 1.6 mg of commercial graphene oxide as a starting material to 4 ml of deionized water, and add 50 ul of 97% concentrated HNO 3 The pH value of the solution was adjusted to 1, and then the obtained solution was placed in an ultrasonic pool with a power of 300W for 30 minutes to obtain acidic graphene oxide with a concentration of 0.4 mg / ml at pH=1. then follow figure 1 The method in the technical route obtains a woven all-carbon memory storage device, and the switching ratio and threshold voltage of the device are shown in Table 2.
[0058] Table 2: Memory device properties prepared with 0.4mg / ml starting material in Example 2
[0059] Sample serial number
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