Preparation method of large-size cu(100) single crystal copper foil

Abstract

The invention provides a preparation method of a large-size Cu(100) single-crystal copper foil. The method comprises the step that a polycrystalline copper foil doped with metallic elements serves as the raw material, and single-crystal Cu(100) with a super-large size is prepared through a special annealing technology. The preparation method of the large-size Cu(100) single-crystal copper foil solves the problem that the single-crystal Cu(100) is high in price, and preparation of the Cu(100) single-crystal copper foil is achieved through the very simple method.

Description

technical field [0001] The invention relates to a preparation method of large-size Cu(100) single crystal copper foil. Background technique [0002] In 2009, Rouff et al. first discovered that high-quality single-layer graphene can be effectively obtained by using chemical vapor deposition (CVD) with copper foil as the substrate and catalyst. This method is simple, easy to operate, and low in cost. By adjusting the experimental conditions, large-sized single-crystal graphene can be obtained, and the obtained graphene can be easily transferred to other substrates. Based on these advantages, the use of CVD to grow graphene on copper foil has attracted much attention. [0003] However, there is a big problem with graphene prepared by CVD, that is, most of the synthesized graphene is polycrystalline. The existence of grain boundaries will greatly reduce the mobility of graphene, hindering its application in the field of electronic devices. At present, reducing the grain bound...

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Problems solved by technology

These surface treatment methods can effectively eliminate the point defect density on the copper foil surface, but cannot significantly reduce the grain boundary density

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