Vertical three-dimensional semiconductor device

Abstract

The present invention relates to a vertical, three-dimensional semiconductor device (10) comprising a source layer (102) on a substrate (104), a horizontal stack of layers (106) of a repetitive sequence on the source layer (102), each sequence comprising an electrically isolating layer (108) and an electrically conductive gate layer (110). An electrically isolating layer (108a) of the stack of layers (106) is in contact with the source layer (102), a vertical channel structure (112) extending through the horizontal stack of layers (106), a metal drain (114) being arranged above the horizontal stack of layers (106) and the vertical channel structure (112), the source layer (102) being arranged to inject charge carries into the vertical channel structure (112) and the metal drain (114) being arranged to extract charge carries from the vertical channel structure (112). The semiconductor device (10) may be junction-less and the vertical channel structure (112) may comprise a high mobility semiconductor material.

Description

technical field [0001] The present invention relates to a vertical three-dimensional semiconductor device and a method for manufacturing such a device. Background technique [0002] Advances in semiconductor manufacturing and processing technology over the past 50 years have resulted in integrated circuits with consistently smaller physical transistor devices, allowing more circuitry to be packed on a single chip. This increased capacity per unit area typically reduces cost or increases functionality such that the number of transistors in an integrated circuit roughly doubles every two years. As a result, the production of more cost-effective electronic devices that may have increased functionality has been provided over time. In general, as the physical size of transistor devices shrinks, device performance, cost per unit, and switching power consumption decrease while speed increases. [0003] However, transistor scaling has become increasingly difficult over time as the...

AI Technical Summary

Problems solved by technology

However, the scaling of the stack not only increases the fabrication and processing requirements of the device, but also results in an increase in the drive current required for device operation

Larger drive currents result in increased power dissipation and risk of device damage or failure

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