High-sensitivity wide-range force sensor and manufacturing method thereof

A force sensor and high-sensitivity technology, applied in the field of high-sensitivity and wide-range piezoresistive force sensor and its manufacturing field, can solve the problem that the measurement range and accuracy cannot be well balanced, and achieve sensitivity and range optimization, high sensitivity, and guarantee reliability effect

Inactive Publication Date: 2016-06-15
SOUTHEAST UNIV
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AI Technical Summary

Problems solved by technology

The measurement range and accuracy of the force sensor are usually not well balanced, especially in the field of wind pressure measurement, the size of the wind pressure is proportional to the square of the wind speed, so the sensor needs to have a very high sensitivity when the wind is small, and at the same time it must have a wide range. measuring range

Method used

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  • High-sensitivity wide-range force sensor and manufacturing method thereof
  • High-sensitivity wide-range force sensor and manufacturing method thereof
  • High-sensitivity wide-range force sensor and manufacturing method thereof

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Embodiment Construction

[0024] The present invention will be further described below in conjunction with the accompanying drawings.

[0025] The invention proposes a piezoresistive force sensor structure with higher sensitivity and wider range. The sensor is made of SOI silicon wafer, and the upper silicon film of the SOI silicon wafer is used to fabricate a force-sensitive structure with higher sensitivity but narrower range; the bulk silicon is used to fabricate a force-sensitive structure with wider range but lower sensitivity, combined with the above Two sensor structures with different sensitivities and measuring ranges obtain a force sensor with both higher sensitivity and wider measuring range. When the external force measured by the sensor is small, the upper high-sensitivity structure bends downward, and the lower-layer wide-range sensitive structure remains unchanged. At this time, the output of the sensor is determined by the upper-layer high-sensitivity structure; when the measured force ...

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Abstract

The invention discloses a high-sensitivity wide-range force sensor and a manufacturing method thereof. The sensor comprises a substrate (1), a lower-layer silicon cantilever beam (2), an upper-layer silicon thin film (3), a first dielectric layer (41), second dielectric layers (42), a first piezoresistor (51), a second piezoresistor (52), a first outgoing guide line (61) and a second outgoing guide line (62), wherein the first outgoing guide line (61) and the second outgoing guide line (62) are outgoing lines of the first piezoresistor (51) and the second piezoresistor (52); the substrate (1) is hollow, the lower-layer silicon cantilever beam (2) is located in a hollow area of an upper surface of the center of the substrate (1), and the surface of the lower-layer silicon cantilever beam (2) is level with the upper surface of the substrate (1), one end of the lower-layer silicon cantilever beam (2) is connected with the substrate (1), and the other end of the lower-layer silicon cantilever beam (2) is suspended. The sensor provided by the invention has high sensitivity under the action of a small force, and also has a wide measurement range. The whole process of the manufacturing method of the sensor is simple.

Description

technical field [0001] The invention relates to a force sensor, in particular to a piezoresistive force sensor with high sensitivity and wide range and a manufacturing method thereof. Background technique [0002] Among the micromechanical devices manufactured by semiconductor materials and MEMS technology, force sensors are a relatively mature category. At present, force sensors have been widely used in industrial control, biology, medical and other fields. MEMS force sensors are mainly divided into piezoresistive force sensors, capacitive force sensors, etc. according to their working principles, and the mainstream force sensors on the market are still piezoresistive. Although the piezoresistive force sensor has a certain temperature effect due to the use of the piezoresistive effect to measure deformation, it needs to adopt a certain temperature compensation mechanism, but its structure is simple, high sensitivity, good linearity, easy integration and convenient measurem...

Claims

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Application Information

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IPC IPC(8): B81B3/00B81C1/00G01L1/18
CPCB81B3/0021B81B3/0037B81B3/007B81C1/0015B81C1/00658G01L1/18
Inventor 秦明叶一舟王芳高磬雅
Owner SOUTHEAST UNIV
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