Carbon nano tube thin film transistor and manufacturing method thereof

Abstract

The invention discloses a carbon nano tube thin film transistor and a manufacturing method thereof. The carbon nano tube thin film transistor comprises a source electrode, a drain electrode, multiple strap-shaped protrusions arranged in the channel area between the source electrode and the drain electrode at intervals and a carbon nano tube layer arranged in the interval area between the multiple protrusions and adjacent protrusions, wherein the multiple protrusions are sequentially arranged in the width direction of a channel and extend in the length direction of the channel. By the adoption of the carbon nano tube thin film transistor and the manufacturing method, network-shaped carbon nano tubes can be more orderly arranged in the thin film transistor, and the effect of improving the performance of the thin film transistor with the network-shaped carbon nano tubes is achieved.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a carbon nanotube thin film transistor and a manufacturing method thereof. Background technique [0002] Carbon nanotubes are considered to be one of the most promising materials in the post-Moore's law era due to their excellent electrical properties and stability. Intrinsic carbon nanotubes are 2 / 3 semiconducting and 1 / 3 metallic, and metallic carbon nanotubes limit their application range as transistor channel materials. In recent years, network carbon nanotube thin film transistors based on solution separation and purification technology have received more and more attention, because solution separation and purification technology can prepare 99% or even 99.9% of highly semiconducting carbon nanotubes , and the networked carbon nanotube thin film transistor needs to pass through multiple carbon nanotubes for the transport of carriers from the source to the drain, so it is p...

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Problems solved by technology

However, the carbon tube distribution of general network-like carbon nanotubes is disordered (please refer to figure 1 , figure 1 According to the electron micrograph of the arrangement of carbon tubes in the thin film transistor channel of the prior art), the number of nodes on the path between the source and the drain is large, and the junction resistance is also large, resulting in small on-state current and mobility

[0003] It can be seen that although the performance of networked carbon nanotube transistors is better than that of amorphous silicon and organic thin film materials, it is still far from the intrinsic properties of carbon nanotubes.

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