Method for improving film thickness uniformity in gradient pressure mode

Abstract

The invention discloses a method for improving film thickness uniformity in a gradient pressure mode. The method comprises the following steps: S1, ISSG (in-situ steam generation) equipment is adopted; S2, in STI (shallow trench isolation) is realized through steam pressure of the ISSG equipment with the gradient pressure mode so as to form a liner oxidation layer in a penetration process reaction stage of a wafer. The film thickness uniformity of the liner oxidation layer for STI is improved, and the method has the effects that the cost is reduced, the working efficiency is increased and the product quality is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for improving film thickness uniformity in a gradient pressure mode. Background technique [0002] Shallow trench isolation (Shallow Trench Isolation, STI) linear oxide layer (lineroxidation) is a key process step in the manufacturing process of semiconductor devices. The shallow trench isolation linear oxide layer has the functions of repairing the substrate damage caused by the shallow trench etching and rounding the sharp corners caused by the shallow trench etching process. Therefore, the quality of the shallow trench isolation linear oxide layer has a great influence on the stability and reliability of the device. In this process step, there are high requirements for the film thickness and uniformity of the shallow trench isolation linear oxide layer. . [0003] The process step of forming the shallow trench isolation linear oxide layer is perf...

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Problems solved by technology

This method generally requires multiple tests to obtain good uniformity: not only the cost of time, control and equipment use is increased; but also the use time of the equipment will be occupied, which reduces the use efficiency of the equipment

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