Transistors and methods of forming them

Abstract

The invention discloses a transistor and a forming method therefor. The forming method for the transistor comprises the steps of providing a semiconductor substrate; forming a gate structure on the semiconductor substrate; forming grooves in the semiconductor substrate on two sides of the gate structure; forming an anti-breakdown layer on a side wall, close to one side of the gate structure, of any groove; and forming a source and a drain in the grooves. According to the method, the performance of the formed transistor can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a transistor and a forming method thereof. Background technique [0002] Transistors are the most basic components in semiconductor manufacturing and are widely used in various integrated circuits. The transistor generally has a symmetrical structure, mainly including: a gate structure located on the surface of the semiconductor substrate, and a source and a drain located in the semiconductor substrate on both sides of the gate structure. The source and drain are formed by high doping, which can be divided into N-type doping and P-type doping according to different device types. [0003] With the continuous development of semiconductor technology, the integration level of integrated circuits is getting higher and higher, the circuit density inside integrated circuits is increasing, the number of components contained is also increasing, and the size of semiconductor compon...

AI Technical Summary

Problems solved by technology

Since the dopant ions in the source and drain of the transistor are easy to diffuse laterally into the channel region, the lateral breakdown voltage of the transistor is reduced, and the problems such as the decrease of the drain induction barrier are also becoming more and more significant.

And as the transistor size gets smaller, the above problems become more significant

[0004] Therefore, the performance of the transistor formed by the prior art needs to be further improved

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