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Yttrium manganate film step low energy consumption resistive variable memory and its preparation and use method

A resistive variable memory, low energy consumption technology, applied in the direction of electrical components, etc., to achieve the effect of reducing noise, improving storage density, and easy integration

Inactive Publication Date: 2017-12-15
HENAN UNIVERSITY
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

However, higher computing performance will inevitably require components with greater heat dissipation, higher density packaging and more power consumption per unit area

Method used

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  • Yttrium manganate film step low energy consumption resistive variable memory and its preparation and use method
  • Yttrium manganate film step low energy consumption resistive variable memory and its preparation and use method
  • Yttrium manganate film step low energy consumption resistive variable memory and its preparation and use method

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Embodiment Construction

[0040] Below in conjunction with accompanying drawing and embodiment the present invention is described in detail:

[0041] like figure 1 and figure 2 As shown, the YMO thin film step low energy consumption resistive memory of the present invention includes Pt / TiO 2 / SiO 2 / Si composite substrate layer 1 and set on Pt / TiO 2 / SiO 2 The YMO thin film step layer 2 on the upper surface of the / Si composite substrate layer 1, the YMO thin film step layer 2 includes a YMO thin film thick layer 3 and a YMO thin film layer 4, and the upper surface of the YMO thin film step layer 2 is provided with a metal upper electrode layer, Pt / TiO 2 / SiO2 The Pt layer in the middle layer of the / Si composite substrate is used as the lower electrode layer, and the YMO thin film step layer 2 is arranged between the metal upper electrode layer and the lower electrode layer.

[0042] In the present invention, Pt / TiO 2 / SiO 2 The Pt layer in the / Si composite substrate layer 1 offers multiple...

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Abstract

The invention discloses a yttrium manganate film step low-energy resistive variable memory, which comprises a Pt / TiO2 / SiO2 / Si composite substrate layer and a YMO film step layer arranged on the upper surface of the Pt / TiO2 / SiO2 / Si composite substrate layer, YMO The stepped film layer includes a thick YMO thin film layer and a thin YMO thin film layer, a metal upper electrode layer is arranged on the upper surface of the YMO thin film stepped layer, and the Pt layer in the Pt / TiO2 / SiO2 / Si composite substrate layer is used as the lower electrode layer. The invention has the advantages of highly stable working characteristics, low energy consumption, and repeated cycle use, can effectively overcome the problems of power consumption and heat dissipation in the process of information storage, and has excellent cycle tolerance, retention characteristics, and erasing speed.

Description

technical field [0001] The invention relates to the technical field of semiconductor non-volatile memory, in particular to a kind of yttrium manganate (molecular formula: YMnO 3 Abbreviated as: YMO, the same below) thin film step low energy consumption resistive memory and its preparation and use method. Background technique [0002] With the improvement of informatization, energy consumption and heat dissipation of semiconductor devices have become urgent problems to be solved. According to Moore's Law, the performance of computers will double approximately every 18 months. However, higher computing performance will inevitably require components with greater heat dissipation, higher density packaging and more power consumption per unit area. The high energy consumption generated during the storage, processing and transmission of massive data and the pollution, carbon emissions and climate warming caused by it have become a concern in the world today. Therefore, the develo...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
CPCH10N70/841H10N70/8836H10N70/011
Inventor 张伟风魏凌刘鹏飞
Owner HENAN UNIVERSITY
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