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Semiconductor device having back gate connected with negative capacitor, manufacturing method for semiconductor device, and electronic equipment

A negative capacitor and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems such as device reduction, and achieve the effect of reducing off-current and sub-threshold swing.

Active Publication Date: 2016-05-25
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, the limit value of SS at room temperature is about 60mV / dec, and it is difficult to reduce it with the reduction of device size

Method used

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  • Semiconductor device having back gate connected with negative capacitor, manufacturing method for semiconductor device, and electronic equipment
  • Semiconductor device having back gate connected with negative capacitor, manufacturing method for semiconductor device, and electronic equipment
  • Semiconductor device having back gate connected with negative capacitor, manufacturing method for semiconductor device, and electronic equipment

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Embodiment Construction

[0011] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concept of the present disclosure.

[0012] Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. The figures are not drawn to scale, with certain details exaggerated and possibly omitted for clarity of presentation. The shapes of the various regions and layers shown in the figure, as well as their relative sizes and positional relationships are only exemplary, and may deviate due to manufacturing tolerances or technical limitations in practice, and those skilled in the art will Regions / layers with different shapes, s...

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Abstract

The invention discloses a semiconductor device having a back gate connected with a negative capacitor, a manufacturing method for the semiconductor device, and electronic equipment including the semiconductor device. According to embodiments, the semiconductor device can comprise a transistor and the negative capacitor, wherein the transistor can comprise a control gate and the back gate, and the negative capacitor is connected with the back gate in series.

Description

technical field [0001] The present disclosure relates to semiconductor technology, and more particularly, to a semiconductor device with a negative capacitance connected to its back gate, a manufacturing method thereof, and an electronic device including the semiconductor device. Background technique [0002] Sub-threshold swing (Sub-thresholdSwing, SS) is an important performance parameter greater than zero of a metal-oxide-semiconductor field-effect transistor (MOSFET), and it is hoped that the smaller the better. At present, the limit value of SS at room temperature is about 60mV / dec, and it is difficult to reduce it with the reduction of device size. It is expected to achieve smaller SS to improve device performance. Contents of the invention [0003] An object of the present disclosure is at least in part to provide a semiconductor device with a negative capacitance connected to its back gate, a method of manufacturing the same, and an electronic device including the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L27/06H01L21/82H01L21/28
CPCH01L21/28H01L21/82H01L27/06H01L27/0629H01L29/78
Inventor 朱慧珑朱正勇
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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