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Preparation method of selenium-tellurium alloy semiconductor micro-wire

A selenium-tellurium alloy and semiconductor technology, which is applied in the field of preparation of selenium-tellurium alloy semiconductor micron wires, can solve the problems of difficult control conditions, unfavorable environment, complicated process, etc., and achieve the effects of wide applicability, low environmental pollution, and simple process

Inactive Publication Date: 2016-05-11
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the preparation of selenium-tellurium alloy semiconductor microwires mainly adopts chemical synthesis method, which has complicated process, difficult conditions to control, high cost, low yield, and the by-products produced at the same time are not good for the environment.

Method used

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  • Preparation method of selenium-tellurium alloy semiconductor micro-wire
  • Preparation method of selenium-tellurium alloy semiconductor micro-wire
  • Preparation method of selenium-tellurium alloy semiconductor micro-wire

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] a. high-purity selenium powder (Se x Te 1-x (x=1)) tightly packed into a phosphate glass tube closed at one end, the outer diameter of the glass tube is 23mm, the inner diameter is 3mm, and the length is 80mm. After vacuuming, then seal the other end of the glass tube well.

[0024] b. The assembled fiber preform is drawn on a drawing tower at a drawing temperature of 620°C. The drawn selenium fiber has an outer diameter of 600 μm, a core diameter of 350 μm, and a length of tens of centimeters.

[0025] c. Soak the selenium fiber in a mixed acid solution with a concentration of 35% HF and 10% HCl for 4 hours, heat it in a water bath at 40°C, then ultrasonicate, separate, and wash to obtain ultra-long micron wires of selenium semiconductors. figure 1 It is the EDS map of the selected area of ​​the selenium semiconductor micron wire. The spectrum shows that the micron wire is pure selenium element, and the characteristic peak of Pt element is due to the spraying of Pt ...

Embodiment 2

[0027] a. High-purity tellurium powder (Se x Te 1-x (x=0)) tightly packed into a phosphate glass tube with one end closed, the outer diameter of the glass tube is 25mm, the inner diameter is 3.2mm, and the length is 100mm. After vacuuming, then seal the other end of the glass tube well.

[0028] b. The assembled fiber preform is drawn on a drawing tower at a drawing temperature of 650°C. The drawn tellurium fiber has an outer diameter of 300 μm, a core diameter of 45 μm, and a length of tens of centimeters.

[0029] c. Soak the tellurium fiber in a mixed acid solution with a concentration of 35% HF and 10% HCl for 5 hours, heat it in a water bath at 40°C, then ultrasonicate, separate, and clean, and finally obtain a tellurium semiconductor ultra-long micron wire.

Embodiment 3

[0031] a. the high-purity selenium powder and tellurium powder in a molar ratio of 4:1 (Se x Te 1-x (x=0.8)) mixed evenly, and then tightly filled into a phosphate glass tube with one end closed, the outer diameter of the glass tube is 20mm, the inner diameter is 3mm, and the length is 80mm. After vacuuming, then seal the other end of the glass tube well.

[0032] b. The assembled fiber preform is drawn on a drawing tower at a drawing temperature of 630°C. The drawn selenium-tellurium alloy semiconductor fiber has a diameter of 350 μm, a core diameter of 80 μm, and a length of tens of centimeters.

[0033] c. Soak selenium-tellurium alloy semiconductor fibers in a mixed acid solution of 35% HF and 10% HCl for 4.5 hours, heat in a water bath at 40°C, then ultrasonically, separate, and clean, and finally obtain ultra-long micron wires of selenium-tellurium alloy semiconductors. image 3 Is Se 0.8 Te 0.2 The EDS map of the selected area on the surface of the alloy semiconducto...

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Abstract

The invention discloses a preparation method of a selenium-tellurium alloy semiconductor micro-wire. The method comprises the steps: first, selecting a glass material having a heating drawing temperature in the range of selenium-tellurium alloy semiconductor liquid temperature; second, cold processing glass into a glass tube, filling the glass tube with evenly mixed selenium powder and tellurium powder, and closing two ends of the glass tube; third, heating and drawing the assembled glass tube on an optical fiber drawing column, and adjusting drawing parameters so that wire diameter is of nano and micro levels; fourth, a soaking drawn wire with selenium-tellurium alloy core / glass coating in an acidic solution so that the glass coating is corroded by the acidic solution, and completing corroding to obtain the selenium-tellurium alloy semiconductor micro-wire. The preparation process of the selenium-tellurium alloy semiconductor micro-wire is simple, and the micro-wire is large in length and uniform in diameter; the composition (selenium and tellurium ratio), diameter and length of the selenium-tellurium alloy semiconductor micro-wire may be adjusted by controlling the drawing parameters.

Description

technical field [0001] The invention relates to a material manufacturing of semiconductor micro-wires, in particular to a preparation method of selenium-tellurium alloy semiconductor micro-wires. Background technique [0002] In recent years, researchers from all over the world have paid great attention to and researched nano / micron materials, and conducted extensive and in-depth research on the structure and performance, preparation technology and application prospects of nano / micron materials. Among these novel nano / micro materials, semiconductor nanomaterials have become one of the most popular researches because of their unique properties and potential application value. However, the monodispersity and monooperability of nano / micro materials are generally poor, and these unfavorable factors greatly reduce the value of some practical applications of nano / micro materials. At present, the key technical issue in the application of nano / micro materials is how to achieve homo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B19/02C01B19/04
CPCC01B19/02C01B19/04C01P2002/85C01P2004/03C01P2004/04C01P2004/10C01P2004/60C01P2004/61
Inventor 杨中民唐国武钱奇
Owner SOUTH CHINA UNIV OF TECH
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