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Graphene room temperature terahertz wave detector and preparation method

A graphene and terahertz technology, applied in the field of terahertz wave detectors, can solve problems such as slow response speed, and achieve the effect of improving miniaturization, high sensitivity, and strong light field coupling ability

Active Publication Date: 2016-04-20
安徽荣程电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it is difficult to achieve the purpose of radiation detection by traditionally relying on quantum well subband transitions at room temperature, because the energy of photons is much smaller than thermal energy, and it is easy to reach thermal saturation.
At present, commercial terahertz wave detectors that are widely used include shortcomings such as radiant heat engine (need refrigeration), Schottky diode (below 1 Hz), pyroelectric detector (slow response speed), etc. Therefore, it is necessary to explore new Physical principles and terahertz wave detection using new semiconductor materials

Method used

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  • Graphene room temperature terahertz wave detector and preparation method
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  • Graphene room temperature terahertz wave detector and preparation method

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Effect test

Embodiment 1

[0044] The thickness of the sapphire substrate is 0.5mm, when the outer diameter of the logarithmic periodic antenna structure is 2mm, the radian is 40°, the thickness is 100, the thickness of the lead electrode 3 is 200nm, and the conductive channel CVD graphene of 80um (concentration is about 10 13 cm -2 , the mobility is about 1000~5000cm 2 V -1 the s -1 ). Under the irradiation of terahertz waves, since the response of the antenna to terahertz waves is related to the polarization direction of the electric field (such as Figure 9 As shown), when the terahertz wave is incident on the front of the detector vertically, and the long side of the logarithmic periodic antenna is about 30° from the direction of the electric field, the responsivity of the antenna is the largest, and the obtained photocurrent is the largest. When the terahertz wave is vertically incident to the front of the detector, and the long side of the antenna is parallel to the antenna, the responsivity o...

Embodiment 2

[0046] The thickness of the sapphire substrate is 1mm, when the outer diameter of the logarithmic periodic antenna structure is 1mm, the radian is 50°, the thickness is 100, the thickness of the lead electrode is 200nm, and the conductive channel CVD graphene of 6um (concentration is about 10 13 cm -2 , the mobility is about 1000~5000cm 2 V -1 the s -1 ), the antenna response is related to the polarization direction of the electric field. Similar to Example 1, the antenna response is also related to the bias current on the device. As the current increases, the greater the photoresponsivity and the greater the photocurrent obtained, as Figure 7 As shown, under the premise of a fixed distance of 7cm from the source, the terahertz photoresponsivity of different chopping frequencies is obtained at a bias current of 0.5mA or 1.0mA or 1.5mA or 2.0mA.

Embodiment 3

[0048] The thickness of the sapphire substrate is 0.7mm, when the outer diameter of the logarithmic periodic antenna structure is 2mm, the radian is 40°, the thickness is 100, the thickness of the lead electrode is 200nm, and the conductive channel CVD graphene of 20um (concentration is about 10 13 cm -2 , the mobility is about 1000~5000cm 2 V -1 the s -1 ), the antenna response is related to the polarization direction of the electric field. Similar to Example 1, the antenna response is also related to the distance from the source on the device. As the distance from the source increases, the smaller the photoresponsivity and the smaller the photocurrent obtained, as Figure 8 As shown, the terahertz photoresponsivity of different chopping frequencies is obtained at a fixed bias current of 2mA at a distance of 7cm or 15cm, 25cm or 50cm from the source.

[0049] The parameters of the detector structure vary within a certain range. The graphene room temperature terahertz wave ...

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Abstract

The invention discloses a graphene room temperature terahertz wave detector, and the detector comprises a sapphire substrate, log-periodic antennas formed on the sapphire substrate through evaporation, and lead electrodes. Moreover, two sides of the terahertz wave coupling log-periodic antennas are respectively connected with the corresponding lead electrode. A graphene conductive trench with adjustable carrier concentration and high migration rate is disposed in a gap of the log-periodic antennas in a transfer manner, thereby guaranteeing the interconnection between graphene and the log-periodic antenna at two sides. The detector is advantageous in that the detector is high in terahertz wave response, can achieve the detection of broadband, high speed, high sensitivity and high signal to noise ratio terahertz waves; the detector is good in integration and miniaturization, and lays a foundation for the large-scale application.

Description

technical field [0001] The present invention relates to a terahertz wave detector, in particular to a graphene / logarithmic periodic antenna / sapphire substrate structure to achieve high speed, high sensitivity and high signal-to-noise ratio for terahertz waves at room temperature. Background technique [0002] Terahertz (Hz) radiation refers to electromagnetic waves with a frequency between 0.1-10THz (wavelength 3mm-30um), located in the band where far-infrared and microwave intersect. Thus a THz gap (terahertz gap) is formed. [0003] The characteristics and applications of terahertz photons: (a) The photon energy is small; the rotation and vibration levels of biological macromolecules and DNA molecules are mostly in the terahertz band, and terahertz radiation can be used for disease diagnosis, detection of organisms, and skin imaging of cancer cells . (b) It has high transmittance to many dielectric materials; it can perform non-destructive inspection on objects, such as ...

Claims

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Application Information

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IPC IPC(8): H01L27/144
CPCH01L27/1443
Inventor 王林刘昌龙唐伟伟陈效双陆卫
Owner 安徽荣程电子科技有限公司
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