Substrate processing apparatus and substrate processing method

Abstract

The invention relates to a substrate processing apparatus and a substrate processing method, being able to restrain production of residue and splashing of liquid. The substrate processing apparatus includes a rotating holder for a substrate, a first nozzle used to eject a jet flow, a second nozzle used to discharge a continuous flow, and a nozzle moving unit integrally moving the first and second nozzles. A landing position of the continuous flow is located closer to a rotation center than a landing position of the jet flow is. At least movement paths of the landing positions of the jet flow and the continuous flow or flow directions of the continuous flow and the jet flow are different from each other. The movement paths are made to be different from each other by locating the landing position of the continuous flow downstream of the movement path of the landing position of the jet flow. The flow directions are made to be different from each other by tilting the continuous flow.

Description

technical field [0001] The present invention relates to a substrate processing technique for processing a substrate by supplying a processing liquid to the substrate while rotating the substrate. Substrates to be processed include semiconductor wafers, glass substrates for liquid crystal display devices, glass substrates for plasma display panels, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, and photomask substrates. Background technique [0002] In the manufacturing process of such a substrate, for example, Patent Documents 1 and 2 disclose an apparatus for processing a substrate as follows. This apparatus for processing a substrate includes a two-fluid nozzle and a nozzle (also referred to as a "straight nozzle") that ejects a continuous flow of a processing liquid onto a substrate. The two-fluid nozzle mixes a processing liquid with a pressurized gas to generate a jet flow of liquid droplets of the processing liquid, and ejects the ...

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Problems solved by technology

Conversely, if the landing position of the jet stream 361 of the liquid droplet of the etching liquid is very far away from the landing position of the continuous flow 362 of the etching liquid, the liquid splash 370 will not occur. The etchant is stirred, so there is a problem of creating a large amount of etch residue

[0013] In addition, in the case where the above-mentioned etching method is realized using the device configuration of the modified example of Patent Document 1, a groove (groove formed in a pattern of the substrate) T1 depressed in the vertical direction is formed on the upper surface of the substrate W. , in the case of processing the film U1 formed in the trench T1, as Figure 15 As shown, the etching solution 351 formed in the vicinity of one side wall of the trench T1 formed on the substrate W is not sufficiently stirred due to the jet stream 361 that sprays the liquid droplets of the etching solution obliquely.

Therefore, there is a problem that the gas bubbles 99 stay on one side wall to generate etching residues.

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