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A trench gate igbt and its manufacturing method

A manufacturing method and trench gate technology, applied in the IGBT field, can solve problems such as high on-state voltage drop and poor performance, and achieve the effects of reducing on-state voltage drop, improving performance, and increasing trench density

Active Publication Date: 2018-12-21
ZHUZHOU CRRC TIMES SEMICON CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The on-state voltage drop of the trench gate IGBT chip with the existing structure is high, and its performance is poor

Method used

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  • A trench gate igbt and its manufacturing method
  • A trench gate igbt and its manufacturing method
  • A trench gate igbt and its manufacturing method

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Embodiment Construction

[0054] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0055] As mentioned in the background art, the on-state voltage drop of the trench gate IGBT with the existing structure is high, and its performance is poor.

[0056] Based on this, an embodiment of the present application provides a trench gate IGBT and a manufacturing method thereof, by forming at least one auxiliary groove between the first conventional trench and the second conventional trench to increase the trench gate IGBT The groove density can enhanc...

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Abstract

The present invention discloses a trench gate IGBT and a manufacturing method thereof. A cell comprises a first emitter electrode metal electrode, at least one auxiliary groove and a second emitter electrode metal electrode which are located at one side of a source region departed from a base region and are arranged along a second direction; wherein both the first emitter electrode metal electrode and the second emitter electrode metal electrode extend to the base region, the auxiliary groove is contacted with the source region, and the auxiliary groove extends to a drift region, the auxiliary groove is provided with an auxiliary gate layer therein, a second gate oxide layer is arranged between the inner wall of the auxiliary groove and the auxiliary gate layer, wherein, a first direction is intersected with the second direction. According to the technical solution provided by the present invention, at least one auxiliary groove is formed between a first conventional trench and a second conventional trench, so that trench density of the trench gate IGBT is increased, a conductivity modulation effect is improved, and on-state voltage drop of the trench gate IGBT is further reduced, and the performance of the trench gate IGBT is improved.

Description

technical field [0001] The present invention relates to the technical field of IGBT (Insulted Gate Bipolar Transistor, insulated gate bipolar transistor), and more specifically, relates to a trench gate IGBT and a manufacturing method thereof. Background technique [0002] Insulated gate bipolar transistors have the characteristics of on-state voltage drop, large current capacity, high input impedance, fast response and simple control, and are widely used in industry, information, new energy, medicine, transportation and other fields. [0003] refer to figure 1 As shown, it is a schematic structural diagram of an existing trench gate IGBT chip. In the cell of the existing trench gate IGBT chip, there are two conventional trench gates 1, and the gap between the two conventional trench gates is It includes a source region 2 and an emitter metal electrode 3 oppositely arranged, wherein the emitter metal electrode 3 extends to the P-base region. The on-state voltage drop of th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/739H01L21/331
CPCH01L29/66348H01L29/7397
Inventor 刘国友覃荣震黄建伟罗海辉戴小平
Owner ZHUZHOU CRRC TIMES SEMICON CO LTD
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