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Manufacturing method for high-precision isolated boss-shaped structure HTCC substrate

A technology of isolated convex type and manufacturing method, which is applied in the direction of circuit substrate materials, printed circuit manufacturing, laminated printed circuit boards, etc., and can solve the problems that the isolated convex structure cannot be obtained and the high-dimensional application of the substrate is limited.

Active Publication Date: 2016-03-02
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the limitations of HTCC technology, most of the formed substrates are concave structures, and it is impossible to obtain isolated convex structures through ordinary laminated lamination processes.
This limits the high-dimensional application of the substrate

Method used

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  • Manufacturing method for high-precision isolated boss-shaped structure HTCC substrate

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Embodiment Construction

[0016] A method for manufacturing a high-precision isolated boss structure HTCC substrate, comprising the following process steps:

[0017] 1) Use cast green tape suitable for HTCC process, and perform layer-by-layer punching, hole filling, and printing operations according to product metallization wiring requirements;

[0018] 2) Carry out the first lamination and hot pressing on the lamination board with the metallized pattern filled and printed raw ceramic tape according to the boss part and the base part respectively, and the hot pressing pressure is 100-300psi;

[0019] 3) Laser ablation technology is used to process the hot-pressed green ceramic belt of the boss part according to the size required by the product. all items are retained;

[0020] 4) After laser ablation of the whole stack of raw ceramic tapes on the boss part, use sticky dust rollers or brushes to clean the dust remaining on the surface of the individual boss porcelain parts and the whole stack of cavity...

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Abstract

The invention discloses a manufacturing method for a high-precision isolated boss-shaped structure HTCC (high temperature co-fired ceramic) substrate. A multi-layered ceramic co-firing technology is adopted; a green tape suitable for the HTCC technology is taken as the base material; wolfram is taken as the metallization material; a shock insulator indian kalimeris herb film and a seamless spliced laminating method are adopted; according to the manufactured isolated boss-shaped structure HTCC substrate, the processing precision for the outer boss can achieve plus and minus 0.10 mm; the position offset of an upper layer and a lower layer is less than 0.20 mm; an interconnection wiring relation is ensured among the layers, and the HTCC substrate can meet all the electrical property index requirements of the national military standard.

Description

technical field [0001] The invention relates to a method for manufacturing an HTCC substrate with a high-precision isolated boss structure, is aimed at the method for manufacturing a special-shaped substrate, and belongs to the technical field of HTCC multilayer ceramics. Background technique [0002] High-temperature co-fired ceramics (HTCC) technology is a technology that uses high-melting-point metallization pastes such as tungsten to print on 92-96% alumina tape-cast raw ceramic tapes, and then laminated and laminated at 1500-1600 ° C. The process technology of co-firing at high temperature. Compared with low-temperature co-fired ceramics (LTCC), high-temperature co-fired ceramics (HTCC) have the advantages of high mechanical strength, stable chemical properties, high heat dissipation coefficient and low material cost. [0003] HTCC substrate is a substrate product based on high temperature co-fired multilayer ceramic technology, which is used in various electronic pack...

Claims

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Application Information

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IPC IPC(8): H05K1/03H05K3/00
CPCH05K1/0306H05K3/0026H05K3/0058H05K2203/107
Inventor 庞学满龚锦林曹坤陈宇宁
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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