A mems device that prevents etching damage of the suspension layer
A suspension layer and device technology, applied in the direction of electric solid devices, semiconductor devices, piezoelectric devices/electrostrictive devices, etc., can solve problems such as damage to the bottom of the movable structure layer, and avoid etching backsplash damage. Implementation method Simple, Integrity-Guaranteed Effects
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[0024] The present invention will be further described below in conjunction with the accompanying drawings.
[0025] Such as Figure 13 As shown, a MEMS device for preventing etching damage of the suspension layer provided by the present invention is composed of an SOI silicon wafer substrate, a movable structure layer 8 and a cap silicon wafer 10,
[0026] The substrate is made of SOI silicon wafer (composed of substrate silicon 1, buried oxide layer 2 and top silicon 3), and the top silicon 3 of the SOI silicon wafer is made of N-type or P-type low-resistance silicon with a resistivity of 0.001Ω cm- 0.5Ω cm;
[0027] A shallow cavity 4, an electrode 9 (also called a lower electrode) and an electrode isolation groove 5 are provided on the surface of the top layer silicon 3 of the SOI silicon wafer of the substrate, and a first oxide layer 6 and a second oxide layer 7 are provided on the surface of the shallow cavity 4. The thickness of the first oxide layer 6 is greater tha...
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