Preparation method for dye-sensitized solar cell
A technology for solar cells and dye sensitization, applied in the field of solar cell preparation, can solve the problems of low conductivity, restricted photoelectric conversion efficiency of dye-sensitized solar cells, unfavorable separation and transmission of charge carriers, etc. The effect of shortening the soaking time and increasing the amount of dye adsorption
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[0017] The invention provides a kind of preparation method of dye-sensitized solar cell, it comprises the following steps:
[0018] Step A, providing a transparent substrate material 1 with a clean surface, and depositing a dense titanium dioxide film 21 on the surface of the substrate material 1 by atomic layer deposition technology;
[0019] Step B, using molecular layer deposition technology to deposit a titanium-containing organic-inorganic composite film 22 on the dense titanium dioxide film 21 obtained in step A;
[0020] Step C, annealing the material obtained in step B at 400-600° C. for 0.5-2 hours, immersing the material obtained in the heat treatment in dye, taking it out, washing it, and drying it to obtain the photoanode 2 of the dye-sensitized solar cell.
[0021] Preferably, the soaking condition in step C is soaking in N719 absolute ethanol solution with a concentration of 0.1-5mol / L for 0.5-12h.
[0022] Preferably, step D is also included, placing the photoa...
Embodiment 1
[0042] In step A, the FTO conductive glass is cleaned with isopropanol under ultrasonic conditions, and then the cleaned FTO conductive glass is blown dry with compressed nitrogen, and a dense titanium dioxide film with a thickness of 300nm is deposited on the clean FTO conductive glass by atomic layer deposition technology. Specific steps include:
[0043] A1, put the surface-cleaned FTO conductive glass into the reaction chamber of the atomic layer deposition equipment at a temperature of 80-200 ° C, and purge it with 50 sccm high-purity nitrogen for 5 minutes;
[0044] A2, TiCl with a purity greater than 97%4 Heating to 65°C forms TiCl 4 vapor, and pulse the TiCl 4 The steam is sent into the reaction chamber, the pulse time is 0.05s, the exposure time is 8s, and then purged with high-purity nitrogen, the purge time is 15s;
[0045] A3, send deionized water into the reaction chamber in the form of pulses, the pulse time is 0.1s, the exposure time is 8s, and then purged wit...
Embodiment 2
[0056] Step A, clean the ITO conductive glass with alcohol under ultrasonic conditions, then dry the cleaned ITO conductive glass with compressed nitrogen, and deposit a dense titanium dioxide film with a thickness of 500nm on the cleaned ITO conductive glass by atomic layer deposition technology. Specific steps include:
[0057] A1, put the surface-cleaned ITO conductive glass into the reaction chamber of the atomic layer deposition equipment at a temperature of 150°C, and purge it with 100 sccm high-purity nitrogen for 30 minutes;
[0058] A2, heat titanium tetraisopropoxide with a purity greater than 97% to 65°C to form titanium tetraisopropoxide vapor, and send titanium tetraisopropoxide vapor into the reaction chamber in pulse form, the pulse time is 0.05s, and the exposure time 8s, and then purged with high-purity nitrogen, the purging time is 15s;
[0059] A3, send deionized water into the reaction chamber in the form of pulses, the pulse time is 0.2s, the exposure tim...
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