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Vertical hall device

A vertical Hall and device technology, applied in the direction of Hall effect devices, electric solid devices, instruments, etc.

Active Publication Date: 2016-01-20
SENIS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Contacts are formed by highly doped N+ regions

Method used

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Examples

Experimental program
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Embodiment Construction

[0056] Figure 4 is a plan view of a first embodiment of a four-contact vertical Hall device 1 according to the present invention. The vertical Hall device 1 is fabricated, for example, by a well-known CMOS process and includes a deep N-well NW embedded in a low-doped P-type substrate 3 (substrate-doped porous silicon (PS) is used). Preferably, the deep N-well NW has a rectangular shape with length L and width W. The vertical Hall device 1 has 4 electrical contacts 4 - 7 arranged at the N-well NW surface and arranged along the first symmetry line 8 , and these electrical contacts are symmetrical with respect to the symmetry plane 9 . The line of symmetry 8 is a straight line and runs orthogonally to the plane of symmetry 9 . Electrical contacts 4-7 are made of highly doped N + area formation. The electrical contacts 4-7 have a generally rectangular shape. The internal contacts 5, 6 have the same length l 6 and the same width W 2 , and the external contacts 4, 5 have the...

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PUM

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Abstract

A vertical Hall device (1) has a deep N-well (NW), two inner contacts (5, 6), two outer contacts (4, 7) and, optionally, a central contact (12) disposed at a surface of the deep N-well (NW) and arranged along a straight symmetry line (8). The vertical Hall device (1) is designed according to the invention to have either an effective width of the outer contacts (4, 7) that is bigger than an effective width of the inner contacts (5, 6) and / or a shallow highly doped P + stripe disposed between the inner contacts (5, 6) or between each of the inner contacts (5, 6) and the central contact (12). These measures help to balance the resistances of the Wheatstone bridge which describes the electrical characteristics of the vertical Hall device.

Description

technical field [0001] The present invention relates to a vertical Hall device manufactured by an IC (Integrated Circuit) process of an integrated circuit, such as a CMOS process. Background technique [0002] A Hall effect device or simply a Hall device (which is also called a Hall element or a Hall sensor) is a device that converts a component measured as a magnetic field vector into a voltage. Hall devices are currently the most commonly used magnetic sensors. They are commercially available both as stand-alone devices and as integrated circuits comprising combinations of Hall devices, current sources, amplifiers, and other signal conditioning electronics. The working principle and basic process of Hall devices are described in the book entitled "Hall Effect Devices" by RS Popovic (Institute of Physics Publishing, Bristoland Philadelphia 2004). [0003] Briefly, there are two types of Hall devices, which are referred to as horizontal Hall devices and vertical Hall devic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/06
CPCH10N52/101G01R33/077
Inventor 萨沙·迪米特里耶维奇拉迪沃耶·波波维奇
Owner SENIS
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