Semiconductor device and manufacturing method thereof

Abstract

The invention provides a semiconductor device, which comprises a substrate, a second conductor layer, a third conductor layer, isolating structures, hollow cavities, oxide layers, oxidation barrier layers on the oxide layers, and a device structure, wherein the substrate comprises a first semiconductor material; the second conductor layer is located on the substrate; the third conductor layer is located on the second conductor layer; the isolating structure is located at two sides of the third semiconductor layer above the substrate; and the hollow cavities are located at the end parts of the second semiconductor layer and between the third semiconductor layer and the substrate; the oxide layers and the oxidation barrier layers thereon are located on the inner surfaces of the hollow cavities and on the side walls of the isolating structures; the device structure is located on the third semiconductor layer; and source-drain regions of the device structure are located above the hollow cavities. The device structure provided by the invention simultaneously has the advantages of a bulk-silicon device and an SOI device, and has the characteristics of low cost, small electricity leakage, low power consumption, high speed, relatively simple process and high integration level.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] With the continuous shrinking of device size, the number of devices on a chip per unit area is increasing, which will lead to an increase in dynamic power consumption. At the same time, the continuous shrinking of device size will inevitably lead to an increase in leakage current, which in turn will cause an increase in static power consumption. , and with the high integration of semiconductor devices, the channel length of MOSFET continues to shorten, and a series of effects that can be ignored in the MOSFET long channel model become more and more significant, and even become the dominant factor affecting the performance of the device. This phenomenon is collectively referred to as short channel effect. The short channel effect will deteriorate the electrical performance of the device, ...

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Problems solved by technology

However, the cost of the SOI substrate is high, and a larger device area is required to avoid the floating body effect (FloatingBodyEffect), which is difficult to meet the requirements of high integration of the device. In addition, due to the embedded silicon dioxide layer, the heat dissipation performance of the device is affected. influences

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