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Negative thermal expansion ceramic material ScxIn2-xW3O12 and preparation method thereof

A technology of scxin2-xw3o12 and ceramic materials, which is applied in the field of negative thermal expansion ceramic materials ScxIn2-xW3O12 and its preparation, can solve the problems of high synthesis cost and high price, and achieve low cost, compact ceramic structure, wide application value and application prospect Effect

Inactive Publication Date: 2016-01-20
YANGZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But its raw material rare earth oxide Sc 2 o 3 The price of the material is very high, which leads to high synthesis cost of this kind of negative thermal expansion, and it is difficult to put it into practical application. Therefore, it is of great significance to find a new type of negative thermal expansion material with low price and excellent negative thermal expansion performance.

Method used

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  • Negative thermal expansion ceramic material ScxIn2-xW3O12 and preparation method thereof
  • Negative thermal expansion ceramic material ScxIn2-xW3O12 and preparation method thereof
  • Negative thermal expansion ceramic material ScxIn2-xW3O12 and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] (1) Synthesis of negative thermal expansion material ScInW 3 o 12 , to analyze pure Sc 2 o 3 、In 2 o 3 and WO 3 Powder is raw material, according to molar ratio Sc 2 o 3 : In 2 o 3 : WO 3 =1:1:3 Weigh the raw materials, mix them in alcohol, and ball mill them for 12 hours. After ball milling, dry the raw materials in an oven at 60°C, and then grind them with an agate mortar for 0.5 hours.

[0022] (2) Add polyvinyl alcohol (PVA) accounting for 2% of the total mass to the uniformly ball-milled material in step (1), grind to make the mixture uniform, and then cold-press at 50 MPa to form a tablet.

[0023] (3) The material after tableting in step (2) was degummed at 500°C for 0.5h, sintered at 950°C for 24h, and cooled naturally with the furnace to obtain the negative thermal expansion material ScInW 3 o 12 ceramics.

Embodiment 2

[0025] (1) Synthesis of negative thermal expansion material Sc 1.1 In 0.9 W 3 o 12 , to analyze pure Sc 2 o 3 、In 2 o 3 and WO 3 Powder is raw material, according to molar ratio Sc 2 o 3 :In 2 o 3 : WO 3=1.1:0.9:3 Weigh the raw materials, mix them in alcohol, and then ball mill them for 18 hours. After ball milling, dry the raw materials in an oven at 80°C, and then grind them with an agate mortar for 0.8 hours.

[0026] (2) Add polyvinyl alcohol (PVA) accounting for 3% of the total mass to the uniformly ball-milled material in step (1), grind to make the mixture uniform, and then cold-press at 100 MPa to form a tablet.

[0027] (3) The material after tableting in step (2) was degummed at 500°C for 0.8h, sintered at 1050°C for 18h, and cooled naturally with the furnace to obtain the negative thermal expansion material Sc 1.1 In 0.9 W 3 o 12 ceramics.

Embodiment 3

[0029] (1) Synthesis of negative thermal expansion material Sc 1.2 In 0.8 W 3 o 12 , to analyze pure Sc 2 o 3 、In 2 o 3 and WO 3 Powder is raw material, according to molar ratio Sc 2 o 3 :In 2 o 3 : WO 3 =1.2:0.8:3 Weigh the raw materials, mix them in alcohol, and then ball mill them for 24 hours. After ball milling, dry the raw materials in an oven at 100°C, and then grind them with an agate mortar for 1 hour.

[0030] (2) Add polyvinyl alcohol (PVA) accounting for 5% of the total mass to the uniformly ball-milled material in step (1), grind to make the mixture uniform, and then cold-press at 150 MPa to form a tablet.

[0031] (3) The material after tableting in step (2) was degummed at 500°C for 1 hour, sintered at 1150°C for 12 hours, and cooled naturally with the furnace to obtain the negative thermal expansion material Sc 1.1 In 0.9 W 3 o 12 ceramics.

[0032] Down figure 1 is the preparation of ScInW 3 o 12 The XRD pattern of the ceramic, from the fig...

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Abstract

Belonging to the field of inorganic nonmetal negative thermal expansion functional materials, the invention discloses a negative thermal expansion ceramic material ScxIn2-xW3O12 and a preparation method thereof, wherein x is greater than or equal to 1 and smaller than or equal to 1.2. The negative thermal expansion ScxIn2-xW3O12 ceramic material adopts Sc2O3, In2O3 and WO3 as the raw materials and is prepared by solid phase method. The preparation method includes: weighing raw material oxides according to certain molar ratio, and conducting ball milling, molding and sintering at 950-1200DEG C to obtain the negative thermal expansion ceramic material ScxIn2-xW3O12 with compact structure and stable negative thermal expansion performance at a temperature ranging from room temperature to a melting temperature. For example, in a temperature range from room temperature to 700DEG C, ScInW3O12 ceramic has a linear thermal expansion coefficient of -5.97*10<-6> / K, an almost linear thermal expansion curve, no phase change, stable thermal expansion performance, and good negative thermal expansion performance. At the same time, the preparation method of the negative thermal expansion material ScxIn2-xW3O12 provided by the invention has the advantages of simplicity, short preparation cycle, low cost, environmental protection and no pollution, thus having good application prospect.

Description

technical field [0001] The invention belongs to the field of negative thermal expansion inorganic functional materials, in particular to a negative thermal expansion ceramic material Sc x In 2-x W 3 o 12 and its preparation method. Background technique [0002] Materials that "shrink with heat and expand with cold" in volume as the temperature changes are called negative thermal expansion materials. With the development of device miniaturization and aerospace technology in the fields of microelectronics, optics and micromechanics in recent years, the precise size of materials is crucial to the function of devices. The thermal stress caused by the mismatch of thermal expansion coefficients is often the main reason for device fatigue, performance degradation, failure or even fracture and shedding. The size of the device often changes due to changes in the working environment temperature, resulting in unstable performance or even failure of the device. The discovery of ne...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/495C04B35/622
Inventor 刘红飞张志萍杨露马健曾祥华陈小兵
Owner YANGZHOU UNIV
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