Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Low-voltage folded cascode transconductance amplifier

A transconductance amplifier, cascode technology, applied in differential amplifiers, DC-coupled DC amplifiers, improved amplifiers to reduce temperature/power supply voltage changes, etc., can solve the problem of affecting circuit functions, and it is difficult to meet high-performance transconductance amplifiers Requirements and other issues to achieve the effect of increasing the slew rate, large unity gain bandwidth and phase margin, improving speed and stability

Active Publication Date: 2016-01-06
CHONGQING GIGACHIP TECH CO LTD
View PDF4 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the structure using the substrate of the MOS transistor as the input terminal has the risk that the substrate parasitic triode may be turned on, which will affect the function of the circuit in serious cases.
Several traditional structures are difficult to meet the requirements of high-performance transconductance amplifiers under low power supply voltage

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Low-voltage folded cascode transconductance amplifier
  • Low-voltage folded cascode transconductance amplifier
  • Low-voltage folded cascode transconductance amplifier

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] Hereinafter, the preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings; it should be understood that the preferred embodiments are only for illustrating the present invention, not for limiting the protection scope of the present invention.

[0021] In order to understand the technical solution of the present invention in more detail, first analyze the working principles, advantages and disadvantages of the two traditional structure transconductance amplifiers. figure 1 Shows a schematic diagram of a two-stage substrate input folded cascode transconductance amplifier, such as figure 1 As shown, since the PMOS tube has the advantages of excellent matching and low noise when used as the input tube, the PMOS tube is usually used as the input tube of the transconductance amplifier in non-high-speed and low-noise applications. In this structure, the input signals Vinp and Vinn are input from the substrate of the PMOS...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a low-voltage folded cascode transconductance amplifier, comprising an input stage structure, a first stage load structure, a constant current source structure and a second stage structure, wherein the input stage structure comprises PMOS input tubes Ma1 / Ma2 / Mb1 / Mb2 and NMOS input tubes Mna1 / Mna2 / Mnb1 / Mnb2. According to the low-voltage folded cascode transconductance amplifier disclosed by the invention, the input tubes Mna1, Mna2, Mnb1 and Mnb2 are added to effectively inhibit adverse effects generated on the functions and performance of the entire circuit when substrate parasitic transistors of the PMOS input tubes Ma1, Ma2, Mb1 and Mb2 are turned on.

Description

Technical field [0001] The invention belongs to the technical field of analog or digital-analog hybrid integrated circuits, and relates to a low-voltage folding cascode transconductance amplifier. Background technique [0002] In recent years, with the continuous development of integrated circuit manufacturing technology, the need for low-power analog integrated circuits has gradually increased. In order to meet the requirements of low power consumption, the power supply voltage has been further reduced. In response to this trend, some products have been developed for low power supply voltage. Transconductance amplifier structure under application, among them, the structure with the substrate of the MOS tube as the input terminal is one of them. In this structure, as the power supply voltage decreases, the MOS tube in the transconductance amplifier will work in the sub-threshold region , So it will still provide a considerable degree of gain, and compared with the atmospheric str...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/30H03F3/45
Inventor 徐代果胡刚毅李儒章王健安陈光炳王育新付东兵刘涛邓民明石寒夫
Owner CHONGQING GIGACHIP TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com