Multi-layered inductor capable of reducing stray capacitance

Abstract

The invention discloses a multi-layered inductor capable of reducing stray capacitance, and belongs to the technical field of electrical equipment and electric engineering. The multi-layered inductor capable of reducing stray capacitance comprises an iron core, a framework and multi-layer windings winding on the framework; each winding layer comprises four turning angles in four break angles of the framework; the multi-layered inductor capable of reducing stray capacitance is characterized in that an L-shaped gasket is arranged between every two layers of the windings in the four turning angles of the multi-layer windings for separating the winding layers; the four surfaces of the iron core are not equipped with gaskets, and the winding layers winding on the iron core are in air insulation. Compared with the design method of the existing multi-layered inductor, the multi-layer inductor in the invention increases the spacing among the layers, and reduces the dielectric constant of the insulation layer, so that the interlayer stray capacitance of the inductor can be effectively reduced, and the high-frequency performance of the inductor is improved.

Description

technical field [0001] The invention discloses a multilayer inductor for reducing parasitic capacitance, which belongs to the technical field of electrical equipment and electrical engineering. Background technique [0002] Compared with Si devices, SiC (silicon carbide) power devices have excellent electrical characteristics, and are more and more widely used in power electronic converters. One of the significant advantages of SiC devices is their high switching speed. Therefore, power electronic converters using SiC power devices can operate at higher switching frequencies. This will greatly reduce the volume and weight of the reactive components in the converter, and increase the power density. [0003] However, higher switching speeds produce large dv / dt and di / dt. When the inductor is used as the energy storage element in the converter, during the switching process of the SiC device, the high dv / dt will interact with the parasitic capacitance of the inductor to genera...

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Problems solved by technology

[0008] Aiming at the deficiencies of the existing technology, a design method of a multilayer inductor with reduced parasitic capacitance is provided. Not only the inductance value is large, the volume is small, but also the parasitic capacitance is small, and the high-frequency performance of the inductor is good, which solves the problem of general multilayer inductors. The problem of large parasitic capacitance of layer inductors

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