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Ag-doped Mg2Si-based thermoelectric thin film and preparing method thereof

A technology of thermoelectric thin film and power supply, applied in ion implantation plating, metal material coating process, coating, etc., can solve the problems of low efficiency, cumbersome process, poor controllability, etc., achieve cost reduction, simplify preparation process, improve The effect of thermoelectric properties

Inactive Publication Date: 2016-01-06
FUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In order to solve the above problems, the present invention provides an Ag-doped Mg 2 Si-based thermoelectric thin film and preparation method thereof, aiming at solving the problem of existing Ag-doped Mg 2 The preparation method of Si-based thermoelectric thin film has the problems of cumbersome process, low efficiency, and poor controllability; through double-target cyclic sputtering, parameters such as sputtering power and sputtering time ratio can be precisely controlled to adjust the doping amount of Ag, which simplifies the preparation technology, which reduces the cost and can meet the needs of large-scale production

Method used

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  • Ag-doped Mg2Si-based thermoelectric thin film and preparing method thereof

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Effect test

Embodiment 1

[0025] 1) Use acetone and alcohol to ultrasonically clean the glass slides for 15 minutes respectively;

[0026] 2) The double-target circular sputtering is carried out by the magnetron sputtering deposition method, in which, one target position puts Mg 2 For the Si target, the power supply is radio frequency power; the other target is placed on the Ag single target, and the power supply is DC power; the vacuum is pumped to 6.5×10 -4 Below Pa, high-purity Ar gas with a flow rate of 30sccm is used as the working gas, and the working pressure is 0.5Pa; firstly, a layer of Mg is plated on the substrate 2 Si, followed by a thin layer of Ag, followed by a layer of Mg 2 Si; Mg 2 Si target RF sputtering power is 120W, Ag target DC sputtering power is 30W; cycle is 12 times, Ag and Mg 2 The sputtering time ratio of Si is 1:10, and the total sputtering time is 1h;

[0027] 3) After the sputtering is completed, turn off the sputtering source, and the background vacuum is better than...

Embodiment 2

[0029] 1) Use acetone and alcohol to ultrasonically clean the glass slides for 15 minutes respectively;

[0030] 2) The double-target circular sputtering is carried out by the magnetron sputtering deposition method, in which, one target position puts Mg 2 For the Si target, the power supply is radio frequency power; the other target is placed on the Ag single target, and the power supply is DC power; the vacuum is pumped to 6.5×10 -4Below Pa, high-purity Ar gas with a flow rate of 30sccm is used as the working gas, and the working pressure is 5.0Pa; firstly, a layer of Mg is plated on the substrate 2 Si, followed by a thin layer of Ag, followed by a layer of Mg 2 Si; Mg 2 Si target RF sputtering power is 120W, Ag target DC sputtering power is 60W; cycle is 24 times, Ag and Mg 2 The sputtering time ratio of Si is 1:60, and the total sputtering time is 1.5h;

[0031] 3) After the sputtering is completed, turn off the sputtering source, and the background vacuum is better tha...

Embodiment 3

[0033] 1) Use acetone and alcohol to ultrasonically clean the glass slides for 15 minutes respectively;

[0034] 2） The magnetron sputtering deposition method is used to carry out double-target cyclic sputtering, in which, one target is placed on Mg 2 For the Si target, the power supply is radio frequency power; the other target is placed on the Ag single target, and the power supply is DC power; the vacuum is pumped to 6.5×10 -4 Below Pa, high-purity Ar gas with a flow rate of 30sccm is used as the working gas, and the working pressure is 0.1Pa; firstly, a layer of Mg is plated on the substrate 2 Si, followed by a thin layer of Ag, followed by a layer of Mg 2 Si; Mg 2 The RF sputtering power of the Si target is 120W, and the DC sputtering power of the Ag target is 90W; the cycle is 1 time, Ag and Mg 2 The sputtering time ratio of Si is 1:4, and the total sputtering time is 1h;

[0035] 3) After the sputtering is completed, turn off the sputtering source, and the backgrou...

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Abstract

The invention discloses Ag-doped Mg2Si-based thermoelectric thin film and a preparing method thereof. Double-target cyclic sputtering is carried out on an insulating substrate by a magnetron sputtering deposition process, wherein in one target position, an Mg2Si target is placed, and a radio frequency power supply is used as the power supply; in another target position, an Ag elemental target is placed, and a direct current power supply is used as the power supply; first, an Mg2Si layer is plated, next, an Ag layer is plated, then an Mg2Si layer is plated again, and one period is finished; cyclical sputtering is carried out according to the period for multiple times so as to prepare and obtain thin film with a laminated structure; and finally, the Ag-doped Mg2Si-based thermoelectric thin film is obtained by adopting vacuum annealing. The magnetron sputtering process preparing technology has the advantages of being strong in film layer and substrate binding force, even and dense in film layer, simple in technology, low in cost and the like, and can be used and popularized in the production of preparing the thermoelectric thin film.

Description

technical field [0001] The invention relates to the field of thermoelectric functional materials, in particular to an Ag-doped Mg 2 Si-based thermoelectric thin film and its preparation method. Background technique [0002] Thermoelectric materials are green and environmentally friendly functional materials that can directly convert heat energy and electric energy; thermoelectric devices made of thermoelectric materials have the advantages of no mechanical rotating parts, no noise in operation, long service life, and no environmental pollution problems. , and can be widely used in fields such as thermoelectric generators, thermoelectric coolers and sensors. Therefore, the preparation of high-performance thermoelectric materials not only meets the requirements of green environmental protection and low-carbon economy, but also has important scientific significance and broad application prospects. [0003] At present, due to the limitation of the performance of thermoelectric...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/58
Inventor 温翠莲陈志坚周白杨詹晓章黄小桂熊锐林逵
Owner FUZHOU UNIV
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