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Hexagonal boron nitride doped with phosphorus and other electrons and its preparation method

A technology of hexagonal boron nitride and isoelectronics is applied in the field of materials to achieve the effect of simple preparation process

Active Publication Date: 2021-03-23
SHENZHEN ANGSTROM EXCELLENCE TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In addition, due to the difference in electronegativity between phosphorus and nitrogen, boron tends to bond with nitrogen rather than phosphorus, so it is challenging to realize hexagonal boron nitride doped with electrons such as phosphorus

Method used

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  • Hexagonal boron nitride doped with phosphorus and other electrons and its preparation method
  • Hexagonal boron nitride doped with phosphorus and other electrons and its preparation method
  • Hexagonal boron nitride doped with phosphorus and other electrons and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0051] Experimental steps:

[0052]Weigh 2 g of boron phosphate powder and place it in an alumina crucible. Under an argon atmosphere of 300 sccm, the temperature was raised to 1000 °C at a rate of 10 °C / min, and annealed at 1000 °C for 10 min. Afterwards, ammonia gas was introduced at a rate of 50 sccm, and reacted at 1000° C. for 30 minutes. After naturally cooling down to room temperature, the product was taken out, ultrasonically treated in ethanol, filtered and dried to obtain the hexagonal boron nitride doped with electrons such as phosphorus.

[0053] Result analysis:

[0054] figure 2 (a) is the microscopic morphology of the electron-doped hexagonal boron nitride such as phosphorus obtained in Example 1, which can be seen to be a two-dimensional nanosheet structure; figure 2 In (b), the peak of P element can be clearly seen, indicating that P element is also involved in the formation of BN, and P-doped hexagonal boron nitride is obtained.

[0055] image 3 (a) ...

Embodiment 2

[0064] Experimental steps:

[0065] Weigh 2 g of boron phosphate powder, place it in an alumina crucible, raise the temperature to 1100 °C at a rate of 10 °C / min under an argon atmosphere of 300 sccm, and heat-preserve and anneal at 1100 °C for 10 min. Afterwards, ammonia gas was introduced at a rate of 50 sccm, and reacted at 1100° C. for 30 minutes. After naturally cooling down to room temperature, the product was taken out, ultrasonically treated in ethanol, filtered and dried to obtain the hexagonal boron nitride doped with electrons such as phosphorus.

[0066] Result analysis:

[0067] From Figure 9 (a) is the microscopic appearance of electron-doped hexagonal boron nitride such as phosphorus obtained in embodiment 2, and it can still be seen that it is a two-dimensional nanosheet structure; Figure 9 In (b), the peak of P element can be clearly seen, indicating that P-doped hexagonal boron nitride has been obtained.

[0068] From Figure 10 (a) It can be seen that...

Embodiment 3

[0070] Experimental steps:

[0071] Weigh 2 g of boron phosphate powder, place it in an alumina crucible, raise the temperature to 1180 °C at a rate of 10 °C / min under an argon atmosphere of 300 sccm, and heat-preserve and anneal at 1180 °C for 10 min. Afterwards, ammonia gas was introduced at a rate of 50 sccm, and the reaction was carried out at 1180°C for 30 minutes. After naturally cooling down to room temperature, the product was taken out, ultrasonically treated in ethanol, filtered and dried to obtain the hexagonal boron nitride doped with electrons such as phosphorus.

[0072] Result analysis:

[0073] From Figure 11 (a) is the microscopic morphology of the electron-doped hexagonal boron nitride such as phosphorus obtained in Example 3, and it can be seen that the two-dimensional nanosheet structure is agglomerated in a circular shape; Figure 11 In (b), the peak of P element can be clearly seen, indicating that P-doped hexagonal boron nitride has been obtained.

...

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Abstract

The invention relates to hexagonal boron nitride with isoelectronic doping of phosphorus, and a preparation method thereof, and belongs to the field of materials. According to the method, a material simultaneously containing a boron element and a phosphorus element is used as a source and reacts with a gas-phase nitrogen source at a high temperature, so that hexagonal boron nitride is generated while the phosphorus element replaces the nitrogen element in boron nitride lattices to form the hexagonal boron nitride with isoelectronic doping of phosphorus, wherein the isoelectronic doping of phosphorus element belongs to a shallow energy level, and phosphorus and nitrogen electronegativity difference forms an isoelectronic trap in the two-dimensional crystal lattice of hexagonal boron nitride, so that electrons and holes are attracted to be localized near isoelectronic impurity phosphorus to form bound excitons, the luminescence is in a deep ultraviolet region, and the luminescence efficiency is greatly enhanced so as to substantially improve the overall luminescence property of the BN two-dimensional nanosheet layer in the deep ultraviolet region.

Description

technical field [0001] The invention relates to the field of materials, in particular to hexagonal boron nitride doped with electrons such as phosphorus and a preparation method thereof. Background technique [0002] The concept of isoelectronic doping was first proposed by Hopfield in 1965 when he was studying the luminescence of GaP and other compound semiconductor materials. The so-called isoelectronic doping refers to the doping of impurities with the same valence electrons as the matrix atoms, generally atoms of the same main group, into the material. These impurities are called isoelectronic impurities, they do not introduce additional electrons or holes, and generally do not produce deep-level impurity states when the doping concentration is low. However, due to the difference in electronegativity between the isoelectronic impurities and the replaced atoms, a short-range action potential will be added to the carriers, thereby forming a bound state of the carriers—the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/70
CPCC09K11/70
Inventor 赵昱王浩王文龙白雪冬
Owner SHENZHEN ANGSTROM EXCELLENCE TECH CO LTD
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