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Preparation method of nanometer clearance and application thereof

A nano-gap, horizontal direction technology, applied in the nanometer field, can solve the problems that the nano-gap cannot meet the application of nano-electrodes, lack of controllability, poor uniformity of the nano-gap, etc.

Inactive Publication Date: 2015-12-30
UNIV OF SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Among these preparation methods, the chemical synthesis method can realize the preparation of large quantities of uniform nano-gap by wrapping the intermediate layer during the synthesis process, but this method lacks addressing ability, and the prepared nano-gap cannot satisfy The application of nano-electrodes; and the mechanical fracture method, electromigration method and shadow deposition method lack good control, so the uniformity of the prepared nano-gap is poor and the success rate is low

Method used

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  • Preparation method of nanometer clearance and application thereof
  • Preparation method of nanometer clearance and application thereof
  • Preparation method of nanometer clearance and application thereof

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Experimental program
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Effect test

preparation example Construction

[0026] The invention provides a method for preparing a nano-gap, comprising:

[0027] 1) performing photolithography treatment on the metal thin film in the sample for depositing the first metal thin film to obtain a sample of the first metal thin film protected by part of the photoresist;

[0028] 2) Etching the first metal in the unprotected part of the photoresist in the obtained sample of the first metal thin film partially protected by the photoresist to obtain an etched sample;

[0029] 3) Depositing metal oxide on the etched sample to obtain a sample deposited with metal oxide;

[0030] 4) Etching the metal oxide deposited in the horizontal direction in the sample deposited with the metal oxide to obtain a sample in which the metal oxide deposited in the horizontal direction was removed;

[0031] 5) Depositing a second metal on the sample from which the metal oxide deposited in the horizontal direction has been removed, to obtain a sample for depositing a second metal ...

Embodiment 1

[0054] Si and SiO 2 Composite substrate composed of (wherein, the lattice orientation of Si sheet is 111, SiO 2 The thickness of the layer is 300 nanometers) and cut into small pieces of 1 cm×1 cm, ultrasonicated through acetone, absolute ethanol, and deionized water for five minutes respectively, and dried with nitrogen gas for later use to obtain a substrate.

[0055] A 30nm gold film was evaporated on the substrate by electron beam thermal evaporation, and the evaporation rate Obtain the sample of deposited gold film;

[0056] The chloroform solution (wherein, the mass percent concentration of PMMA in the mixed solution of PMMA and chloroform is 4wt%) of 950000PMMAA4 weight-average molecular weight with the speed spin coating of 4000 rev / s on the sample of deposition gold thin film, hot stage 180 ℃ of glue-baking For 4 minutes, a sample coated with photoresist with a thickness of 280 nm was obtained.

[0057] Put the sample spin-coated with PMMA into the electron beam e...

Embodiment 2

[0066] Si and SiO 2 Composite substrate composed of (wherein, the lattice orientation of Si sheet is 111, SiO 2 The thickness of the layer is 300 nanometers) and cut into small pieces of 1 cm×1 cm, ultrasonicated through acetone, absolute ethanol, and deionized water for five minutes respectively, and dried with nitrogen gas for later use to obtain a substrate.

[0067] A 30nm gold film was evaporated on the substrate by electron beam thermal evaporation, and the evaporation rate Obtain the sample of deposited gold film;

[0068] The chloroform solution (wherein, the mass percent concentration of PMMA in the mixed solution of PMMA and chloroform is 4wt%) of 950000PMMAA4 weight-average molecular weight with the speed spin coating of 4000 rev / s on the sample of deposition gold thin film, hot stage 180 ℃ of glue-baking For 4 minutes, a sample coated with photoresist with a thickness of 280 nm was obtained.

[0069] Put the sample spin-coated with PMMA into the electron beam e...

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Abstract

Provided in the invention is a preparation method of a nanometer clearance. The preparation method comprises: photoetching is carried out on a sample where a first metallic film is deposited to obtain a sample with the first metallic film protected by one part of photoresist; a first metal unit that is not protected by the photoresist is etched and removed to obtain an etched sample; a metallic oxide is deposited on the etched sample to obtain a sampled with the deposited metallic oxide; the metallic oxide that is arranged on the sample with the deposited metallic oxide at the horizontal direction is etched to obtain a sample where the metallic oxide at the horizontal direction is removed; a second metal unit is deposited on the sample with the removed metallic oxide at the horizontal direction to obtain a sample with a deposited second metallic film; and the photoresist arranged on the sample with the deposited second metallic film, the metallic film on the photoresist, and the metallic oxide are removed to obtain a nanometer clearance. The experiment result demonstrates that the preparation method has the addressing capability and the width uniformity of the nanometer clearance is good and the success rate is high.

Description

technical field [0001] The invention belongs to the field of nanotechnology, and in particular relates to a preparation method and application of a nanogap. Background technique [0002] The nano-gap of extremely small size, especially when its separation distance is less than 10 nanometers, the special nano-morphological characteristics and the resulting electromagnetic field are highly localized, so that it can be used in nano-electrodes, molecular devices, single-photon Light sources still have important applications in plasmonic components, enhanced Raman, and catalytic reactions. [0003] The methods that have been developed to prepare nanogap below 10 nm mainly include chemical synthesis method, mechanical fracture method, electromigration method and shadow deposition method. Among these preparation methods, the chemical synthesis method can realize the preparation of large quantities of uniform nano-gap by wrapping the intermediate layer during the synthesis process,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02B82Y40/00
CPCH01L21/02697B82Y40/00
Inventor 蔡洪冰吴昱昆王晓平罗毅
Owner UNIV OF SCI & TECH OF CHINA
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