Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Two-dimensional splicing treatment method for inclined scanning type photoetching machine during stepping type exposure

A technology of oblique scanning and processing method, which is applied in the field of stepping exposure control of oblique scanning lithography machine, can solve problems such as two-dimensional splicing, and achieve the effect of improving quality and good splicing effect

Active Publication Date: 2015-12-30
HEFEI CHIP FOUND MICROELECTRONICS EQUIP CO LTD
View PDF5 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The object of the present invention is to provide a two-dimensional splicing processing method for an oblique scanning lithography machine during step exposure, so as to solve the problem of two-dimensional splicing when an oblique scanning lithography machine uses a monochrome bitmap for step exposure. stitching problem

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Two-dimensional splicing treatment method for inclined scanning type photoetching machine during stepping type exposure
  • Two-dimensional splicing treatment method for inclined scanning type photoetching machine during stepping type exposure
  • Two-dimensional splicing treatment method for inclined scanning type photoetching machine during stepping type exposure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0033] A method for two-dimensional splicing processing of an oblique scanning photolithography machine during stepping exposure, comprising the following steps:

[0034] S1. Calculate the size of the monochrome bitmap for each split of the graphics to be exposed according to the size of the field of view of the graphics generator and the angle between the graphics generator and the precision motion platform, such as figure 1 , figure 2 Shown:

[0035] Ws=(W-H*tanα)cosα

[0036] H s = H cos α - W s * t a n α

[0037] Among them, Ws represents the width of the monochrome bitmap for each split of the graphics to be exposed, Hs represents the height of the monoc...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a two-dimensional splicing treatment method for an inclined scanning type photoetching machine during stepping type exposure. The two-dimensional splicing treatment method comprises the following steps: calculating a unit bitmap size of a graph to be exposed, which is split for each time; splitting the graph to be exposed into a plurality of unit bitmaps and filling a black graph into an insufficient part; rotating the unit bitmap and extending the unit bitmap to the size of a view field of a graph generator; and moving a precision movement platform and gradually finishing exposure. With the adoption of the two-dimensional splicing treatment method, the problem that the inclined scanning type photoetching machine cannot normally splice at the spliced part in the stepping type exposure process is solved; when the exposed graph is split, conversion treatment is carried out on the exposed graph according to a fixed included angle between the graph generator and the precision movement platform; and by controlling the precision movement platform, all the unit bitmaps are combined to one complete exposed graph, and all the splicing positions of the finally-etched graph have the good splicing effect, so that the quality of the stepping type exposure of the inclined scanning type photoetching machine is improved.

Description

technical field [0001] The invention relates to the technical field of step exposure control of an oblique scanning lithography machine, in particular to a two-dimensional splicing processing method for an oblique scanning lithography machine during step exposure. Background technique [0002] Photolithography is used to print a pattern of features on the surface of a substrate. Such substrates may include chips used in the fabrication of semiconductor devices, various integrated circuits, flat panel displays (eg, liquid crystal displays), circuit boards, biochips, micromechanical electronic chips, optoelectronic circuit chips, and the like. [0003] The oblique scanning lithography technology adds key indicators such as equipment operation capacity and line width accuracy to the original lithography technology, but for some special needs, it still performs step-by-step exposure on some graphics, such as Barcode, serial number, etc. In the step-by-step exposure process, the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G03F7/20
Inventor 陆敏婷
Owner HEFEI CHIP FOUND MICROELECTRONICS EQUIP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com