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Cleaning agent for metal wiring substrate, and method for cleaning semiconductor substrate

A metal wiring and cleaning agent technology, applied in chemical instruments and methods, semiconductor/solid-state device manufacturing, preparation of detergent mixture compositions, etc., can solve the problems of longer standby time of substrates and increased standby status of substrates, etc. Achieve effective and stable cleaning, not easy to deteriorate

Inactive Publication Date: 2015-12-23
WAKO PURE CHEMICAL INDUSTRIES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] On the other hand, in the recent manufacturing process of semiconductor elements, the manufacturing process tends to be complicated due to the miniaturization of metal wiring, and it takes time for the substrate after the post-CMP cleaning process to reach, for example, the layer of metal wiring. Substrates that have completed the post-CMP cleaning process may have longer waiting times
In addition, when the manufacturing process is stopped for a long time due to a failure of the manufacturing equipment, there are many cases where the substrate is on standby during the process.

Method used

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  • Cleaning agent for metal wiring substrate, and method for cleaning semiconductor substrate
  • Cleaning agent for metal wiring substrate, and method for cleaning semiconductor substrate
  • Cleaning agent for metal wiring substrate, and method for cleaning semiconductor substrate

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Embodiment

[0079] Hereinafter, although this invention is demonstrated concretely based on an Example and a comparative example, this invention is not limited to these examples. In addition, unless otherwise specified, the % which exists in the following example means a weight basis (w / w%).

[0080] -Evaluation of the manufacturing method of substrate A-

[0081] Purchased wafers were planarized by polishing the surface of Sematech 845 (copper wiring, barrier metal TaN, oxide film TEOS; manufactured by Sematech) with a diameter of 8 inches with a polishing slurry containing benzotriazole (BTA) Wafers rinsed with pure water. The wafer was dipped in a 1% benzotriazole (BTA) aqueous solution for 1 hour to form a copper (I)-benzotriazole film on the surface of the copper wiring, and then cleaned with a single-wafer cleaner (KAIJO Multi- Spinner) for pure water washing and spin drying. Next, this wafer was chipped to about 2 cm×2 cm, and used as an evaluation substrate A.

[0082] -Evalua...

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Abstract

The present invention relates to a cleaning agent for a substrate having metal wiring, the agent characterized by being used in a cleaning step following chemical mechanical polishing (CMP) in a semiconductor element production process, and characterized by comprising an aqueous solution which has a pH of 10 or higher and contains (A) a carboxylic acid which has a nitrogen-containing heterocyclic ring and (B) an alkylhydroxylamine. The present invention also relates to a method for cleaning a semiconductor substrate, the method characterized by using the cleaning agent.

Description

technical field [0001] The present invention relates to a cleaning agent for substrates with metal wiring and a method for cleaning semiconductor substrates characterized by using the cleaning agent. More specifically, the present invention relates to the manufacturing process of semiconductor elements represented by silicon semiconductors. A cleaning agent for a substrate used in a process of cleaning a semiconductor substrate after a chemical mechanical polishing (CMP) process, and a method for cleaning a semiconductor substrate using the cleaning agent, the substrate having metal wiring. Background technique [0002] In response to market demands such as high performance and miniaturization, semiconductor devices represented by silicon semiconductors are continuously developing towards miniaturization and high integration. Along with miniaturization and high integration, semiconductor substrates are required to have metal wiring with high conductivity or a multilayer wiri...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/304C11D7/32
CPCC11D7/3209C11D7/3218C11D7/3281H01L21/02074C11D11/0047
Inventor 水田浩德绵引勉前泽典明
Owner WAKO PURE CHEMICAL INDUSTRIES
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