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High-sheet resistance cell slice diffusion preparation method

A high square resistance, solar cell technology, applied in the direction of circuits, photovoltaic power generation, electrical components, etc., can solve the problems of low square resistance, low efficiency of solar cells, high doping concentration on the surface, etc.

Active Publication Date: 2015-12-16
CHINT NEW ENERGY TECH (HAINING) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] It can be seen that in the oxygen-rich state, the doping concentration on the surface of the solar cell is high, and the square resistance is relatively low, which increases the recombination of minority carriers and reduces the collection of photocurrent, resulting in a relatively low efficiency of the solar cell.

Method used

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  • High-sheet resistance cell slice diffusion preparation method
  • High-sheet resistance cell slice diffusion preparation method
  • High-sheet resistance cell slice diffusion preparation method

Examples

Experimental program
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Effect test

Embodiment 1

[0049] Embodiment one, adopt the diffusion method provided by the present invention:

[0050] Place the silicon wafer to be processed in a diffusion furnace, and at the same time, pass in oxygen at 700°C to 800°C, and the atmosphere in the furnace is a nitrogen atmosphere. The oxygen flow rate is 0.3L / min~1.5L / min. The time for passing gas into the diffusion furnace is 5 minutes to 7 minutes.

[0051] After the temperature stabilizes, continue to feed oxygen, wherein the oxygen flow rate is increased by 0.3L / min compared with the previous step; at the same time, feed phosphorus-carrying source gas and nitrogen gas for pre-deposition, and the nitrogen flow rate is reduced by 0.3L / min compared with the previous step . The ventilation time lasts 7 minutes to 10 minutes.

[0052] Raise the temperature to 800°C-900°C, continue to introduce phosphorus-carrying source gas and nitrogen, and continue to increase the oxygen flow rate by 0.3L / min on the basis of the previous step, while...

Embodiment 2

[0057] Embodiment two, adopt conventional diffusion process:

[0058] Place the silicon wafer to be processed in a diffusion furnace, and at the same time, under low temperature conditions, a sufficient amount of constant flow of oxygen is introduced, and the furnace is surrounded by a nitrogen atmosphere.

[0059] When the temperature is stable, continue to feed oxygen with a constant flow rate, and simultaneously feed phosphorus-carrying source gas and nitrogen for pre-deposition.

[0060] Stop feeding the phosphorus-carrying source gas and dry oxygen, continue feeding nitrogen, and raise the temperature for 5 minutes.

[0061] After the temperature rises, continue to introduce phosphorus-carrying source gas, dry oxygen and nitrogen to carry out step-by-step trap pushing. The trap pushing time is 30 minutes, and the flow rate of dry oxygen remains unchanged.

[0062] Cool down and leave the boat to complete the diffusion process.

[0063] The silicon chip that embodiment t...

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Abstract

The invention discloses a high-sheet resistance cell slice diffusion preparation method. The method comprises steps: a silicon wafer is placed in a diffusion furnace in a nitrogen atmosphere, and in a low temperature condition, low concentration oxygen is inlet to the diffusion furnace; an oxygen flow is enhanced afterwards, a gas carrying a phosphorus source and the nitrogen with a reduced flow are inlet to the diffusion furnace; after temperature rise, the oxygen with the enhanced flow, the nitrogen with the reduced flow and the gas carrying the phosphorus source are inlet continuously to the diffusion furnace; the oxygen flow is enhanced continuously, and the nitrogen flow is reduced; and temperature falls, and the silicon wafer is taken out from the diffusion furnace. A four-step gradient oxygen inletting method is adopted, the silicon wafer surface concentration can be effectively reduced, surface recombination of carriers is reduced, the diffusion sheet resistance is enhanced through reducing the silicon wafer surface concentration, and the solar cell efficiency is further improved.

Description

technical field [0001] The invention belongs to the field of manufacturing solar cells, and in particular relates to a method for preparing a high-resistivity cell by diffusion. Background technique [0002] A solar cell is a device that directly converts solar energy into electrical energy. It mainly uses the photovoltaic effect of the PN junction to convert solar energy into electrical energy. Because solar cells are clean, pollution-free, and rich in resources, solar power generation has become an important form of power generation. [0003] With the advancement of process technology, the working efficiency of solar cells has been continuously improved. The researchers found that the use of low-concentration shallow emitter junctions (high square resistance) can significantly reduce the recombination velocity of minority carriers on the surface of solar cells, thereby improving the spectral response in the short-wavelength band. Therefore, manufacturing high-resistance ...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L21/223
CPCH01L21/223H01L31/1804Y02E10/547Y02P70/50
Inventor 王辉卢玉荣王仕鹏黄海燕陆川
Owner CHINT NEW ENERGY TECH (HAINING) CO LTD
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