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Polycrystalline silicon wafer texturing and cleaning method

A polycrystalline silicon wafer, mass concentration technology, applied in chemical instruments and methods, crystal growth, final product manufacturing, etc., can solve the problems of large optical loss, low conversion efficiency of solar cells, and large pits on the surface of polycrystalline silicon wafers

Active Publication Date: 2017-03-01
CSG PVTECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the existing polysilicon texturing method, after the polysilicon wafer is textured, the surface of the polysilicon wafer is large and uneven, resulting in high reflectivity of the polysilicon wafer and large optical loss, which in turn leads to low conversion efficiency of the solar cell

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] The polysilicon sheet texturing and cleaning method of embodiment 1 comprises the following steps:

[0035] (1) Soak the polysilicon wafer in the mixed solution at 2°C for 2 minutes for texturing. The mixed solution is composed of nitric acid, hydrofluoric acid and glacial acetic acid with a volume ratio of 15:5:2. The mass concentration of the nitric acid is 65% to 68%, and the purity of the nitric acid is industrial grade. The mass concentration of hydrofluoric acid is 48.4%-49.6%, and the purity of hydrofluoric acid is industrial grade. The mass concentration of glacial acetic acid is 99.8%-99.9%, and the purity grade of glacial acetic acid is electronic grade or analytical pure.

[0036] (2) The polysilicon wafer after texturing is sprayed and cleaned with ultrapure water, potassium hydroxide solution, mixed acid solution and ultrapure water in sequence. Wherein, the temperature of the potassium hydroxide solution is 48° C., and the mass concentration of potassiu...

Embodiment 2

[0039] The polysilicon sheet texturing and cleaning method of embodiment 2 comprises the following steps:

[0040] (1) Soak the polysilicon wafer in the mixed solution at 10°C for 1 minute for texturing. The mixed solution is composed of nitric acid, hydrofluoric acid and glacial acetic acid with a volume ratio of 14:4:1.5. The mass concentration of the nitric acid is 65% to 68%, and the purity of the nitric acid is industrial grade. The mass concentration of hydrofluoric acid is 48.4%-49.6%, and the purity of hydrofluoric acid is industrial grade. The mass concentration of glacial acetic acid is 99.8%-99.9%, and the purity grade of glacial acetic acid is electronic grade or analytical pure.

[0041] (2) The polysilicon wafer after texturing is sprayed and cleaned with ultrapure water, potassium hydroxide solution, mixed acid solution and ultrapure water in sequence. Wherein, the temperature of the potassium hydroxide solution is 52° C., and the mass concentration of potass...

Embodiment 3

[0044] The polysilicon chip texturing and cleaning method of embodiment 3 comprises the following steps:

[0045] (1) Soak the polysilicon wafer in the mixed solution at 5°C for 1.5 minutes for texturing. The mixed solution is composed of nitric acid, hydrofluoric acid and glacial acetic acid with a volume ratio of 15:5:2. The mass concentration of the nitric acid is 65% to 68%, and the purity of the nitric acid is industrial grade. The mass concentration of hydrofluoric acid is 48.4%-49.6%, and the purity of hydrofluoric acid is industrial grade. The mass concentration of glacial acetic acid is 99.8%-99.9%, and the purity grade of glacial acetic acid is electronic grade or analytical pure.

[0046] (2) The polycrystalline silicon wafers after texturing are sprayed and cleaned with ultrapure water, sodium hydroxide solution, mixed acid solution and ultrapure water in sequence. Wherein, the temperature of the sodium hydroxide solution is 50° C., and the mass concentration of...

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PUM

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Abstract

The invention relates to a polycrystalline silicon chip texturing and cleaning method. The polycrystalline silicon chip texturing and cleaning method comprises the following steps that a polycrystalline silicon chip is arranged in mixed liquid of 2-10 DEG C to be immersed for 1-2min to perform texturing, and the mixed liquid is composed of nitric acid, hydrofluoric acid and glacial acetic acid; the polycrystalline silicon chip after texturing is cleaned by water, an inorganic alkali solution, mixed acid liquid and water in turn, wherein temperature of the inorganic alkali solution is 48-52 DEG C, and the mixed acid liquid is composed of hydrochloric acid and hydrofluoric acid; and the cleaned polycrystalline silicon chip is dried. According to the polycrystalline silicon chip texturing and cleaning method, reflectivity of the polycrystalline silicon chip can be reduced.

Description

technical field [0001] The invention relates to the field of solar cell preparation, in particular to a polycrystalline silicon chip texturing and cleaning method. Background technique [0002] Texturing is an essential part of the solar cell manufacturing process. Texturing produces tiny pyramid shapes on the surface of polysilicon wafers to reduce the annoyance of light, thereby absorbing more photon energy. [0003] During texturing, the size and uniformity of the pits formed on the surface of the polycrystalline silicon wafer have a great influence on the conversion efficiency of the prepared solar cell. In the existing polycrystalline silicon texturing method, after the polycrystalline silicon wafer is textured, the surface of the polycrystalline silicon wafer is large and uneven, so that the polycrystalline silicon wafer has high reflectivity and large optical loss, resulting in low conversion efficiency of the solar cell. Contents of the invention [0004] Based o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18C30B33/10
CPCC30B33/10H01L31/1804Y02P70/50
Inventor 梁杭伟李家兰叶雄新孙小菩彭华
Owner CSG PVTECH
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