Method for measuring degeneration power threshold value and damage power threshold value of low noise amplifier

Abstract

The invention discloses a method for measuring a degeneration power threshold value and a damage power threshold value of a low noise amplifier. The method includes the steps of: 1. building a test platform; 2. constructing injection signals; 3. performing testing: (1) measuring a small signal S parameter |S21| and a noise factor NF of a sample to be tested, (2) performing continuous injection on the sample to be tested form a certain time, (3) measuring |S21| and NF of the sample to be tested after the injection, and (4) increasing average power of the injected signals, and repeating the Steps (2) and (3) till acute deterioration of |S21| and NF occurs; 4. drawing a double-y-axis coordinate system curve chart of changes of |S21| and NF as injection power Pin increases, and extracting the degeneration power threshold value and the damage power threshold value from the double-y-axis coordinate system curve chart. The beneficial effects of the method are that a power injection power is good, and a threshold value measuring result can well reflect the anti-power degree of the lower noise amplifier under actual working conditions; and a degeneration power threshold value can be obtained, and high reliability of the lower noise amplifier and a requirement for low noise when the low noise amplifier is used in high-sensitivity electronic equipment are satisfied.

Description

technical field [0001] The invention relates to a method for measuring performance parameters of microelectronic devices and circuits, in particular to a method for measuring low noise amplifier degradation power thresholds and damage power thresholds, and belongs to the field of microelectronic technology. Background technique [0002] With the increasingly complex electromagnetic environment, microelectronic devices and circuits are increasingly threatened. The sensitivity of microelectronic devices and circuits to electromagnetic pulse environments can be characterized by degradation or damage power thresholds. However, the only experimental method currently available as a reference for the determination of the degradation or damage threshold of microelectronic devices and circuits is the National Military Standard of the People's Republic of China "Experimental Method for Electromagnetic Pulse Damage Threshold of Semiconductor Devices", which stipulates that the direct i...

AI Technical Summary

Problems solved by technology

For low-noise amplifiers, the characteristic degradation effect often occurs before the destructive damage effect occurs in the electromagnetic pulse environment, and for the front-end of the radio frequency electronic system and electronic equipment with high sensitivity requirements, the characteristic degradation of the low-noise amplifier cannot be tolerated. Neglected, however, there is currently no experimental method for determining the degraded power threshold of the LNA

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