A method for measuring the degradation power threshold and damage power threshold of low noise amplifier

Abstract

The invention discloses a method for determining a low-noise amplifier degradation power threshold and a damage power threshold, which comprises the following steps: 1. constructing a test platform; 2. constructing an injection signal; 3. testing: (1) measuring the small Signal S-parameter |S21| and noise figure NF, (2) continue to inject the sample to be tested for a certain time, (3) measure the |S21| and NF of the sample to be tested after this injection, (4) increase the average power of the injected signal, Repeat steps (2) and (3) until |S21| and NF deteriorate sharply; 4. Draw the double y-axis coordinate system curve of |S21| and NF as the injection power Pin increases, from which Extract the degradation power threshold and damage power threshold. The advantages of the present invention are: the power injection effect is better, and the threshold measurement result can better reflect the anti-power degree of the low-noise amplifier under the actual working conditions; the degradation power threshold can be obtained, which satisfies the high reliability of the low-noise amplifier and the use of the low-noise amplifier. Requirements for low noise in high-sensitivity electronic equipment.

Description

technical field [0001] The invention relates to a method for measuring performance parameters of microelectronic devices and circuits, in particular to a method for measuring low noise amplifier degradation power thresholds and damage power thresholds, and belongs to the field of microelectronic technology. Background technique [0002] With the increasingly complex electromagnetic environment, microelectronic devices and circuits are increasingly threatened. The sensitivity of microelectronic devices and circuits to electromagnetic pulse environments can be characterized by degradation or damage power thresholds. However, the only experimental method currently available as a reference for the determination of the degradation or damage threshold of microelectronic devices and circuits is the National Military Standard of the People's Republic of China "Experimental Method for Electromagnetic Pulse Damage Threshold of Semiconductor Devices", which stipulates that the direct i...

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Problems solved by technology

For low-noise amplifiers, the characteristic degradation effect often occurs before the destructive damage effect occurs in the electromagnetic pulse environment, and for the front-end of the radio frequency electronic system and electronic equipment with high sensitivity requirements, the characteristic degradation of the low-noise amplifier cannot be tolerated. Neglected, however, there is currently no experimental method for determining the degraded power threshold of the LNA

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