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Micro-bridge structure of broadband high-absorption terahertz wave and fabrication method thereof

A microbridge structure and terahertz technology, applied in the field of room temperature terahertz detection array imaging, can solve the problem of low responsivity, achieve the effect of improving the responsivity, overcoming low terahertz radiation absorption and narrow spectral response

Inactive Publication Date: 2015-12-09
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to solve the problem of low response rate of current terahertz detectors in the wide frequency band, to design a micro-bridge structure with wide band and high absorption of terahertz waves and its preparation method, so as to realize wide spectrum and high detection of terahertz waves. Absorption, improving the response rate of the microbridge structure detection unit to terahertz waves

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  • Micro-bridge structure of broadband high-absorption terahertz wave and fabrication method thereof
  • Micro-bridge structure of broadband high-absorption terahertz wave and fabrication method thereof
  • Micro-bridge structure of broadband high-absorption terahertz wave and fabrication method thereof

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Embodiment Construction

[0023] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments.

[0024] In this embodiment, the microbridge structure with broadband and high absorption of terahertz waves is as follows figure 1 As shown, it includes a metal absorption film 3 on the top layer, a metamaterial pattern 2 on the middle layer, a MEMS microbridge 1 on the bottom layer, and a silicon nitride dielectric layer spacer is set between the two; the metal absorption film is an impedance matching The nano-scale metal absorption film Ti is used for terahertz wave broadband absorption; the MEMS microbridge is as Figure 2-a As shown, it includes a substrate 10, a driving circuit 11, a metal aluminum reflective layer 12, and a bridge deck supported on the metal aluminum reflective layer by bridge legs. The bridge deck includes a supporting layer 16, a top electrode 17, and a vanadium oxide film ( Sensitive material layer) 18, support layer ...

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Abstract

The invention provides a micro-bridge structure of a broadband high-absorption terahertz wave and a fabrication method thereof, which belong to the technical field of imaging of a terahertz detection array at a room temperature and are used for solving the problem of low responsivity under a wide frequency band of a terahertz detector. The micro-bridge structure comprises a metal absorption film at a top layer, a metamaterial pattern at an intermediate layer and a micro electro-mechanical system (MEMS) micro bridge at a bottom layer, wherein silicon nitride dielectric layers are arranged among the metal absorption film, the metamaterial pattern and the MEMS micro bridge in a pairwise manner at intervals; the metal absorption film is an impedance-matching nano-scale metal absorption film; and the metamaterial pattern and the MEMS micro bridge jointly form a metamaterial absorption structure. By the impedance-matching nano-scale metal absorption thin film, the broadband absorption of the terahertz wave can be achieved, and high absorption of the terahertz can be guaranteed through the metamaterial absorption structure jointly formed by the metamaterial pattern and the MEMS micro bridge; the performance for broadband spectrum response and high absorption of the terahertz wave is achieved, and the responsivity of a micro-bridge structurized detection unit to the terahertz wave is comprehensively improved.

Description

technical field [0001] The invention belongs to the technical field of terahertz detection array imaging at room temperature, and in particular relates to a wide-band high-absorption terahertz wave microbridge structure and a preparation method thereof. Background technique [0002] Terahertz waves often refer to electromagnetic waves with a frequency of 0.1THz to 10THZ (wavelength 3mm to 30μm). Due to the special frequency band, which belongs to the transition range between macroelectronics and microphotonics, THz waves exhibit a series of unique properties different from other frequency band electromagnetic waves, making them widely used in military and civilian fields (such as imaging, communication, remote sensing, Radar, astronomy, biomedicine, etc.) have important scientific research value and wide application. Compared with other waves, terahertz waves have the following characteristics: (1) The frequency range of terahertz radiation is very wide, which almost covers...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81B1/00B81B7/02B81C1/00G01J1/42
Inventor 王军陈沛丞谢盼云唐荣黎威志
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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