Micro-bridge structure of broadband high-absorption terahertz wave and fabrication method thereof
A microbridge structure and terahertz technology, applied in the field of room temperature terahertz detection array imaging, can solve the problem of low responsivity, achieve the effect of improving the responsivity, overcoming low terahertz radiation absorption and narrow spectral response
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[0023] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments.
[0024] In this embodiment, the microbridge structure with broadband and high absorption of terahertz waves is as follows figure 1 As shown, it includes a metal absorption film 3 on the top layer, a metamaterial pattern 2 on the middle layer, a MEMS microbridge 1 on the bottom layer, and a silicon nitride dielectric layer spacer is set between the two; the metal absorption film is an impedance matching The nano-scale metal absorption film Ti is used for terahertz wave broadband absorption; the MEMS microbridge is as Figure 2-a As shown, it includes a substrate 10, a driving circuit 11, a metal aluminum reflective layer 12, and a bridge deck supported on the metal aluminum reflective layer by bridge legs. The bridge deck includes a supporting layer 16, a top electrode 17, and a vanadium oxide film ( Sensitive material layer) 18, support layer ...
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