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Method for preparing monocrystal graphene

A single-crystal graphene and semiconductor technology, applied in the direction of single-crystal growth, single-crystal growth, chemical instruments and methods, etc., can solve problems such as high process requirements, complex equipment and control process, etc., to reduce the concentration of carbon sources and reduce carbon Effect of source density, stringency reduction

Active Publication Date: 2015-12-02
NAT INST OF METROLOGY CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] For this reason, the technical problem to be solved by the present invention is that the technical requirements of the method for preparing single crystal graphene in the prior art are too high, and the equipment and control process are complicated

Method used

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Embodiment 1

[0028] The present embodiment provides a kind of method for preparing single crystal graphene, comprises the following steps:

[0029] S1: A laminated structure is obtained by disposing a quartz layer 2 on the upper surface and the lower surface of the copper foil 3, and the quartz layer 2 completely covers the copper foil 3.

[0030] S2: The laminated structure is placed in a closed container that is evacuated from the air, such as figure 1 As shown, the closed vessel is the quartz tube 4 shown in the figure.

[0031] S3: Introduce hydrogen and argon into the closed container, and heat the closed container to 1050° C. to make the copper foil in a molten state; wherein the flow rate of hydrogen gas is 200 sccm, and the flow rate of argon gas is 1000 sccm.

[0032] S4: continuously annealing the laminated structure at a temperature of 1050° C. for 1.5 hours.

[0033] S5: Pass methane and hydrogen gas into the closed vessel to grow single crystal graphene for 25 minutes, where...

Embodiment 2

[0037] The present embodiment provides a kind of method for preparing single crystal graphene, comprises the following steps:

[0038] S1: A laminated structure is obtained by arranging a sapphire layer on the upper surface and the lower surface of the copper foil, and the sapphire layer completely covers the copper foil.

[0039] S2: placing the laminated structure in a quartz tube evacuated of air.

[0040] S3: Introduce hydrogen and argon into the quartz tube, and heat the closed vessel to 1000° C. to make the copper foil in a molten state; wherein the flow rate of hydrogen gas is 150 sccm, and the flow rate of argon gas is 750 sccm.

[0041] S4: continuously annealing the laminated structure at a temperature of 1000° C. for 1.5 hours.

[0042] S5: Pass methane and hydrogen gas into the closed vessel to grow single crystal graphene for 30 minutes, wherein the flow rate of methane and hydrogen gas is 150 sccm.

[0043] S6: Take out the laminated structure, lower the temper...

Embodiment 3

[0046] The present embodiment provides a kind of method for preparing single crystal graphene, comprises the following steps:

[0047] S1: A silicon layer is provided on the upper surface and the lower surface of the copper foil to obtain a laminated structure, and the silicon layer completely covers the copper foil.

[0048] S2: placing the laminated structure in a quartz tube evacuated of air.

[0049] S3: Introduce hydrogen and argon into the quartz tube, and heat the closed vessel to 1025° C. to make the copper foil in a molten state; wherein the flow rate of hydrogen gas is 130 sccm, and the flow rate of argon gas is 850 sccm.

[0050] S4: continuously annealing the laminated structure at a temperature of 1030° C. for 2 hours.

[0051] S5: Pass methane and hydrogen gas into the closed vessel to grow single crystal graphene for 20 minutes, wherein the flow rate of methane and hydrogen gas is 180 sccm.

[0052] S6: Take out the stacked structure, lower the temperature to ...

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Abstract

The invention provides a method for preparing monocrystal graphene. Semiconductor layers are arranged on the upper surface and the lower surface of metal foil to obtain a semiconductor layer-metal foil-semiconductor layer stepped structure; the stepped structure is placed in a closed vessel of which air is emptied, the closed vessel is heated in the state that hydrogen and argon are introduced to enable the metal foil to be in a molten state, the metal foil can make contact with the semiconductor layers on the upper surface and the lower surface more closely, the contact area of the metal foil and methane is greatly decreased, therefore, the carbon source density of the surfaces of the metal foil is greatly reduced, and large-area growth of the monocrystal graphene can be facilitated. Due to the fact that the carbon source density of the surfaces of the metal foil can be greatly reduced by enabling the metal foil to closely make contact with the semiconductor layers on the upper surface and the lower surface, the vacuum degree requirement in the preparation method can be slightly lowered, the strictness for methane quantity control can be also lowered, and therefore the technology difficulty is lowered, so that the preparation process is implemented more easily.

Description

technical field [0001] The invention relates to the technical field of graphene material preparation, in particular to a method for preparing single crystal graphene. Background technique [0002] Graphene is the thinnest and hardest nano-material known in the world. It is almost completely transparent and only absorbs 2.3% of light; its thermal conductivity is as high as 5300W / m K, which is higher than that of carbon nanotubes and diamonds. The electron mobility exceeds 15000cm2 / V·s, which is higher than carbon nanotubes or silicon crystals, and the resistivity is only about 1Ω·m, which is lower than copper or silver. It is the material with the smallest resistivity in the world. Because of its extremely low resistivity and extremely fast electron migration, it is expected to be used to develop a new generation of electronic components or transistors that are thinner and conduct electricity faster. Since graphene is essentially a transparent and good conductor, it is also ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/02C30B25/02C23C16/26
Inventor 王雪深
Owner NAT INST OF METROLOGY CHINA
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