Method for preparing monocrystal graphene
A single-crystal graphene and semiconductor technology, applied in the direction of single-crystal growth, single-crystal growth, chemical instruments and methods, etc., can solve problems such as high process requirements, complex equipment and control process, etc., to reduce the concentration of carbon sources and reduce carbon Effect of source density, stringency reduction
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Embodiment 1
[0028] The present embodiment provides a kind of method for preparing single crystal graphene, comprises the following steps:
[0029] S1: A laminated structure is obtained by disposing a quartz layer 2 on the upper surface and the lower surface of the copper foil 3, and the quartz layer 2 completely covers the copper foil 3.
[0030] S2: The laminated structure is placed in a closed container that is evacuated from the air, such as figure 1 As shown, the closed vessel is the quartz tube 4 shown in the figure.
[0031] S3: Introduce hydrogen and argon into the closed container, and heat the closed container to 1050° C. to make the copper foil in a molten state; wherein the flow rate of hydrogen gas is 200 sccm, and the flow rate of argon gas is 1000 sccm.
[0032] S4: continuously annealing the laminated structure at a temperature of 1050° C. for 1.5 hours.
[0033] S5: Pass methane and hydrogen gas into the closed vessel to grow single crystal graphene for 25 minutes, where...
Embodiment 2
[0037] The present embodiment provides a kind of method for preparing single crystal graphene, comprises the following steps:
[0038] S1: A laminated structure is obtained by arranging a sapphire layer on the upper surface and the lower surface of the copper foil, and the sapphire layer completely covers the copper foil.
[0039] S2: placing the laminated structure in a quartz tube evacuated of air.
[0040] S3: Introduce hydrogen and argon into the quartz tube, and heat the closed vessel to 1000° C. to make the copper foil in a molten state; wherein the flow rate of hydrogen gas is 150 sccm, and the flow rate of argon gas is 750 sccm.
[0041] S4: continuously annealing the laminated structure at a temperature of 1000° C. for 1.5 hours.
[0042] S5: Pass methane and hydrogen gas into the closed vessel to grow single crystal graphene for 30 minutes, wherein the flow rate of methane and hydrogen gas is 150 sccm.
[0043] S6: Take out the laminated structure, lower the temper...
Embodiment 3
[0046] The present embodiment provides a kind of method for preparing single crystal graphene, comprises the following steps:
[0047] S1: A silicon layer is provided on the upper surface and the lower surface of the copper foil to obtain a laminated structure, and the silicon layer completely covers the copper foil.
[0048] S2: placing the laminated structure in a quartz tube evacuated of air.
[0049] S3: Introduce hydrogen and argon into the quartz tube, and heat the closed vessel to 1025° C. to make the copper foil in a molten state; wherein the flow rate of hydrogen gas is 130 sccm, and the flow rate of argon gas is 850 sccm.
[0050] S4: continuously annealing the laminated structure at a temperature of 1030° C. for 2 hours.
[0051] S5: Pass methane and hydrogen gas into the closed vessel to grow single crystal graphene for 20 minutes, wherein the flow rate of methane and hydrogen gas is 180 sccm.
[0052] S6: Take out the stacked structure, lower the temperature to ...
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