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Dual-wavelength Raman mode locked laser

A dual-wavelength, laser technology, applied in the direction of lasers, laser components, phonon exciters, etc., to achieve the effects of convenient debugging, small size, and novel principles

Inactive Publication Date: 2015-11-25
PEOPLES LIBERATION ARMY ORDNANCE ENG COLLEGE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, Raman mode-locked lasers have the advantages of small size, simple structure, and good beam quality. People have used this method to realize single-wavelength Raman mode-locked lasers, and dual-wavelength Raman mode-locked lasers have not been reported yet.

Method used

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  • Dual-wavelength Raman mode locked laser

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Embodiment 1

[0024] Embodiment 1 of the present invention such as figure 1 As shown, it includes laser diode pumping source 1, coupling lens group 2, laser crystal 3, Q-switching device 4, Raman crystal 5, input mirror (M1) 6, output mirror (M2) 7 and temperature control system, the pump The source 1 is located in front of the coupling lens group 2. After the coupling lens group 2, the input mirror (M1) 6 and the output mirror (M2) 7 form a resonant cavity, and the laser crystal 3, Q-switching device 4 and Raman crystal 5 are placed in the resonant cavity in sequence. , the laser crystal 3, the Q-switching device 4 and the Raman crystal 5 are all placed in the temperature control system to keep the temperature of the above-mentioned crystal and device constant, and it is characterized in that the input mirror (M1) 6 is coated with the 99% dielectric film with 99% light reflectance to 1059nm and 1061nm wavelengths and 99% light reflectance to 1173nm and 1175nm wavelengths; the output mirror...

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Abstract

A dual-wavelength Raman mode locked laser, belonging to the solid laser technology field, comprises a laser diode pumping source, a coupling lens unti, a resonant cavity, etc. A laser crystal, a Raman crystal and a Q-switching device are placed in the resonant cavity. A temperature control system enables the above crystals and the device to keep constant in temperature. The dual-wavelength Raman mode locked laser is characterized in that Nd is utilized: after a BaWO4 crystal conducts a 925cm<1> Raman frequency shift on 1059nm and 1061nm dual-wavelength fundamental frequency light generated by a CNGG crystal, 1173nm and 1175nm dual-wavelength Raman light is produced; the end faces of an input lens M1, the laser crystal and the Raman crystal are all plated with dielectric films that have the reflectivity or transmittance not less than 99% to the light with the corresponding wavelengths, and an output lens M2 is plated with a dielectric film that has the reflectivity not less than 99% to the light with the corresponding wavelengths of 1059nm and 1061nm and also plated with a dielectric film that has the reflectivity ranging from 10% to 15% to the light with the wavelengths of 1173nm and 1175nm; and mode locking is performed through the stimulated Raman scattering effect of the Raman crystal, and the pulse width reach the ps magnitude. The dual-wavelength Raman mode locked laser is small in size and simple in structure, provides light beams of great quality, and has important application prospects in terms of terahertz wave generation, differential absorption of laser radar and the like.

Description

technical field [0001] The invention relates to a dual-wavelength Raman mode-locked laser, belonging to the technical field of solid-state lasers. Background technique [0002] Dual-wavelength solid-state lasers are widely used in dual-wavelength laser probes, dual-wavelength laser interferometers, spectral analysis, holographic measurement, medical equipment, differential lidar, and terahertz waves. In particular, dual-wavelength lasers with dual-wavelength intervals in the range of 1nm-20nm have important applications in terahertz wave generation and differential absorption lidar. The current existing methods for this small-interval dual-wavelength laser are: one is to form the split energy level of the same transition energy level of the common laser medium [Y.F.Chen.etal., Opt.Lett., Vol.30, pp.2107- 2110, 2005; L.6uo, et al., Opt.Express, Vol.18, pp.9098-9106, 2010], such as 1.319 and 1.338 μm dual wavelengths in Nd:YAG. People can balance the output of two wavelength...

Claims

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Application Information

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IPC IPC(8): H01S3/30H01S3/08H01S3/098
Inventor 沈洪斌李刚毛少娟王元铂张雏张磊
Owner PEOPLES LIBERATION ARMY ORDNANCE ENG COLLEGE
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