Chemical machinery planarization process method
A chemical-mechanical and process method technology, applied in the field of chemical-mechanical planarization, can solve problems such as circuit failure yield rate, influence device performance, and reduction, and achieve the effects of reducing metal loss and improving performance and yield.
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[0021] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.
[0022] In the present invention, in the planarization process of the ALD metal tungsten, the problem that the removal rate is too high causes great loss of other layers. For this, as figure 1 Shown, the present invention proposes following technical scheme:
[0023] Metal tungsten is filled by atomic layer deposition;
[0024] A first removal process and a second removal process are performed to achieve chemical mechanical planarization of metal tungsten, wherein the pressure and rotation speed in the second removal process are respect...
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