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Film forming apparatus and film forming method

A film-forming device and inductively coupled technology, which is applied in the field of forming diamond-like films, can solve problems such as low heat resistance and thermal deformation of substrate materials, and achieve the effect of simple structure and high film-forming efficiency

Active Publication Date: 2017-08-22
DAINIPPON SCREEN MTG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the size of the base material becomes large, the base material is easily thermally deformed by heating, so it is difficult to adopt means such as improving film formation efficiency by heating.
In addition, this method cannot be used when the heat resistance of the base material is low.

Method used

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  • Film forming apparatus and film forming method
  • Film forming apparatus and film forming method
  • Film forming apparatus and film forming method

Examples

Experimental program
Comparison scheme
Effect test

no. 1 approach ＞

[0095]

[0096]

[0097] while referring to figure 1 , the configuration of the plasma processing apparatus 100 will be described. figure 1 is a diagram schematically showing a schematic configuration of the plasma processing apparatus 100 .

[0098] The plasma processing apparatus 100 has a structure in which a set of chambers 130 to 170 are connected in clusters so as to respectively surround two transfer chambers 120 a and 120 b connected via a delivery chamber 110 .

[0099] Specifically, two load-lock chambers (load-lock chambers)) 130, 130, a pre-processing chamber 140, and a film-forming chamber are disposed around a transfer chamber (first transfer chamber) 120a. Room 150. In addition, a film-forming chamber 150, a post-processing chamber 160, and two unload-lock chambers (unload-lock chamber) 170, 170. In addition, the number and layout of the chambers 110 to 170 are not limited to those illustrated in the drawings. For example, the number of the chambers 110...

no. 2 approach ＞

[0173]

[0174] side by reference Figure 10 to Figure 12 , the film forming apparatus 10 a of the second embodiment will be described. Figure 10 It is a side cross-sectional view schematically showing the structure of the film forming apparatus 10a. Figure 11 , Figure 12 It is a figure which shows the arrangement example of the inductively coupled antenna 21a. In the drawings and the following description, the same components as those included in the film forming apparatus 10 of the first embodiment are denoted by the same reference numerals and descriptions thereof are omitted.

[0175] The film formation apparatus 10a is an apparatus for forming a DLC film on a base material 9 (eg, a glass plate) by plasma CVD, similarly to the film formation apparatus 10 of the first embodiment, and the film formation apparatus 10a is mounted on, for example, the above-described plasma processing apparatus. 100.

[0176] The film forming apparatus 10 includes a chamber 1 in which ...

no. 3 approach ＞

[0194]

[0195] side by reference Figure 13 , Figure 14 , the film forming apparatus 10 b of the third embodiment will be described. Figure 13 It is a side cross-sectional view schematically showing the structure of the film forming apparatus 10b. Figure 14 is viewed from the direction of arrow Q Figure 13 top section view. In the drawings and the following description, the same components as those included in the film forming apparatus 10 of the first embodiment are denoted by the same reference numerals and descriptions thereof are omitted.

[0196] The film forming apparatus 10b is an apparatus for forming a DLC film on the base material 9 (for example, a glass plate) by plasma CVD, similarly to the film forming apparatus 10 of the first embodiment, and the film forming apparatus 10b is mounted on the above-mentioned plasma processing apparatus, for example. 100.

[0197] The film forming apparatus 10b includes a chamber 1 in which a processing space V is formed; ...

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Abstract

The invention provides a film forming device and method capable of improving filming efficiency of a diamond film; the film forming device (10) comprises the following elements: a chamber (1) with a processing room (V); a low inductance coupling antenna (21) arranged in the processing room (V); a high frequency power supply portion (24) intermittently supplying power to the inductance coupling antenna (21); an air supply portion (3) supplying hydrocarbon air to the processing room (V); a relative mobile portion (4) enabling a substrate material (9), being object material of film formation, to move against the inductance coupling antenna (21); a voltage application portion (5) used for applying cathode voltage to the substrate material (9) when high frequency power is temporally stopped to the inductance coupling antenna (21).

Description

technical field [0001] The present invention relates to a technique for forming a diamond-like carbon (DLC) film. Background technique [0002] Diamond-like films have high hardness and strength (mechanical strength), and are excellent in low wear resistance and wear resistance, and are therefore widely used in various applications such as hard coatings. [0003] When forming the diamond-like carbon film, for example, a plasma-enhanced chemical vapor deposition (plasma-enhanced chemical vapor deposition) method is used. Patent Documents 1 to 3 describe an apparatus for forming a diamond-like film by plasma CVD. [0004] Patent Document 1: Japanese Patent No. 4145361 [0005] Patent Document 2: Japanese Patent No. 4646763 [0006] Patent Document 3: Japanese Patent No. 4704453 [0007] When a diamond-like carbon film is formed by plasma CVD, in order to improve the film-forming efficiency, for example, a method of heating a base material to be film-formed is usually emplo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/27C23C16/458C23C16/44
CPCC23C14/0611C23C16/505H01L21/02115H01L21/02274
Inventor 中岛直人羽田浩二吉野裕文
Owner DAINIPPON SCREEN MTG CO LTD
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