An inductor with a metal-filled structure

Abstract

The invention provides an inductor having a metal filler structure. The metal filler structure at least includes: a plurality of metal blocks with the same height as a pin baseline and a plurality of metal wires in radial distribution; one ends of the metal wires are connected with the pin baseline to realize grounding, and the other ends are gathered in an area with no metal distribution and do not intersect; and the metal blocks and the metal wires do not contact. By optimizing the shape, the size and an interval of the metal blocks formed in an area of the inductor where metals are sparsely distributed, an eddy current effect of the metal blocks can be reduced, thereby effectively improving a quality factor of the inductor; and the metal wires in radial distribution are formed in other metal layers except a top layer, one ends of the metal wires are connected to the ground, achieving a function of a shielding layer, effectively reducing the eddy current effect of the metal filler structure, and greatly improving the quality factor of the inductor.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to an inductor with a metal filling structure. Background technique [0002] At present, an integrated circuit device includes multiple metal layers, and the metal in each metal layer is distributed in the insulating material silicon dioxide layer according to different densities according to different applications of the device, and the metal material is generally copper. However, since silicon dioxide is harder than metal copper, and when chemical mechanical polishing (CMP) is performed on the silicon dioxide layer filled with metal copper, a certain pressure needs to be applied. Under the action of pressure, the distribution of the metal copper layer is relatively Sparse areas will have a thinner thickness than areas where the metal copper layer is more densely distributed. The schematic diagram of the silicon dioxide material layer of metal copper with diffe...

AI Technical Summary

Problems solved by technology

[0003] However, after the metal filling structure is formed in the sparse voids of the metal layer, an eddy current effect (eddy current effect) will be introduced, that is, current will be generated in the metal filling structure, which will increase the energy loss of the inductor, thereby The quality factor (quality factor, Q) of the inductor is reduced. The quality factor is the ratio of the energy stored in the inductor to the energy lost. The higher the quality factor of the inductor, the smaller the power consumption of the inductor , the higher the efficiency

At the same time, the formation of the metal filling structure will also increase the capacitance, which will reduce the self-resonant frequency (SRF) of the inductor and affect the quality factor of the inductor.

Images