Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Chemical dry etching machine equipped with pumping pipeline pressure monitoring device

A chemical dry method and monitoring device technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of APC component failure, isolation valve failure, dry pump efficiency attenuation, etc., and achieve the effect of eliminating failures

Inactive Publication Date: 2015-09-09
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] 1. Dry pump efficiency attenuation;
[0004] 2. The O-ring of the pumping pipeline is damaged;
[0005] 3. APC component failure;
[0006] 4. Isolation valve failure, etc.
[0007] Since we don't know the pressure of the pumping pipeline, we may waste a lot of time to troubleshoot the possible causes of the failure one by one

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Chemical dry etching machine equipped with pumping pipeline pressure monitoring device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0016] The present invention will be further elaborated below by describing a preferred specific embodiment in detail in conjunction with the accompanying drawings.

[0017] Such as figure 1 As shown, a chemical dry etching machine equipped with a pumping pipeline pressure monitoring device includes a process chamber 1 connected in sequence through a pumping pipeline 3, an isolation valve 4, an automatic pressure controller 5 and a dry pump 2; the automatic pressure control A commercially available digital pressure detector 6 is arranged between the device 5 and the dry pump 2; the digital pressure detector 6 is arranged outside the pumping pipeline 3; the digital pressure detector 6 is used to detect the pressure change of the pumping pipeline 3. A plurality of O-rings 31 are evenly distributed on the outside of the pumping pipeline 3 .

[0018] Specific application: When the process room encounters "exhaust cannot be completed within the set time", we can block the port bet...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a chemical dry etching machine equipped with a pumping pipeline pressure monitoring device. The chemical dry etching machine comprises a craft room, an isolation valve, an automatic pressure controller and a dry pump which are connected in turn via a pumping pipeline. A digital pressure detector is arranged between the automatic pressure controller and the dry pump. The digital pressure detector is arranged at the external side of the pumping pipeline. The digital pressure detector is used for detecting change of pressure of the pumping pipeline. Multiple O-shaped circles are evenly distributed at the external side of the pumping pipeline. Change of pressure of the pumping pipeline can be monitored so that faults of a pre-APC assembly and the isolation valve of the pumping pipeline can be eliminated in real time, and leakage of the pumping pipeline can be prevented.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a chemical dry etching machine provided with a pumping pipeline pressure monitoring device. Background technique [0002] In the chemical dry etching machine in the prior art, there is no device for monitoring and detecting pressure changes outside the pumping pipeline of the process chamber. If the tool receives an alarm "Vent could not be completed within the set time", it means that the process chamber was unable to vent the gas to the base pressure (below 7.5 mTorr). The reasons for this are as follows: [0003] 1. Dry pump efficiency attenuation; [0004] 2. The O-ring of the pumping pipeline is damaged; [0005] 3. APC component failure; [0006] 4. Isolation valve failure, etc. [0007] Since we don't know the pressure in the pumping line, we can waste a lot of time trying to find out the possible causes of the failure one by one. Contents of the invention...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/306H01L21/66
Inventor 张程王旭东
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com