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Two-dimension cosine waveform surface light tripping structure and solar film cell based on same

A technology of solar cells and light-trapping structures, applied in photovoltaic power generation, circuits, electrical components, etc., can solve the problems of disordered structures, area limitations, and inability to prepare nanostructures, and achieve good angle sensitivity, large forming area, The effect of the strong coupling feature

Inactive Publication Date: 2015-08-26
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Problems solved by technology

However, the preparation method of self-assembly is usually limited by the area, and it is impossible to prepare large-area ordered nanostructures.
In 2013, M.Foldyna et al. can also prepare nanowire structures through the gas-liquid-solid growth mechanism, but the nanoarrays formed by this method are mostly disordered
However, the preparation method of wet etching often also forms disordered structures
Although random and disordered light-trapping structures can obtain absorption growth in a wide spectral range, it is difficult to achieve maximum enhanced absorption due to structural disorder.
In order to arrange the nanostructures in an orderly manner, they used a combination of mask photolithography and wet etching, but this method is only applicable to single crystal silicon solar cells

Method used

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  • Two-dimension cosine waveform surface light tripping structure and solar film cell based on same
  • Two-dimension cosine waveform surface light tripping structure and solar film cell based on same
  • Two-dimension cosine waveform surface light tripping structure and solar film cell based on same

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preparation example Construction

[0022] The preparation method of the silicon-based thin-film solar cell in the present invention comprises the following steps: depositing a transparent conductive oxide on the base of the metal electrode, making a cosine waveform light-trapping structure by interference lithography, and then sequentially depositing and doping to make a silicon absorber layer PN junction, and then use interference lithography to make a cosine waveform light-trapping structure, and finally deposit a transparent conductive oxide.

[0023] The absorption enhancement effect of the periodic two-dimensional cosine wave surface light-trapping structure can be determined according to the short-circuit current density J sc To evaluate, its expression is as follows:

[0024] J sc = q hc ∫ λ · A ( λ ) · I ...

Embodiment 1

[0027] The battery structure we give (see figure 1 with figure 2 ) of the silicon absorption layer thickness is 1000nm, because the effects of two-dimensional light-trapping structures with different periods and heights on absorption enhancement are different, therefore, by evaluating the period P variation range of 300nm to 1300nm and the height H variation range of 100nm at normal incidence Short-circuit current density J corresponding to different light-trapping structures to 1000nm sc (P,H) to optimize the period and height of the periodic two-dimensional light-trapping structure.

[0028] Through this optimization method, the two-dimensional cosine wave surface light trapping structure is optimized, such as image 3 As shown, the period and height of the best two-dimensional cosine wave surface light-trapping structure are 650nm and 800nm ​​respectively (see image 3 The white dot in ), the corresponding short-circuit current density is 28.46mA / cm 2 . Similarly, an ...

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Abstract

The invention discloses a two-dimension cosine waveform surface light tripping structure and a solar film cell based on the structure. The two-dimension cosine waveform surface light tripping structure comprises a cell absorption layer. The upper and lower surfaces of the cell absorption layer respectively have a cosine waveform light trapping structure. The provided periodic two-dimension cosine waveform surface light tripping structure can be numerically optimized, and is capable of advancing absorption efficiency to a theory limit, thereby improving cell conversion efficiency greatly. Meanwhile, compared with an existing light tripping structure, the periodic two-dimension cosine waveform surface light tripping structure is more practical in production; and the surface type thereof can be prepared through a simple two-beam interference photoetching method, and the formed area is large, and thus the defects of limited area and unordered structure and the like in an existing light tripping structure preparation method can be overcome.

Description

technical field [0001] The invention relates to the fields of new clean energy and micro-nano photonics, in particular to a two-dimensional cosine wave surface light-trapping structure and a solar thin film battery based on the structure. Background technique [0002] In today's world, the ever-increasing population and rapid economic development have led to the lack of conventional energy sources and the serious damage to the ecological environment. Therefore, as a natural, renewable and non-polluting new energy source, solar energy has attracted widespread attention of scientific researchers all over the world. Among them, solar cells, which directly convert light energy into clean electrical energy, are the most important innovative application. Silicon material is abundant in nature and has no poison to human body. It occupies an absolute dominant position in solar cell application materials, accounting for more than 98% of the market share. Thin-film silicon-based sol...

Claims

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Application Information

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IPC IPC(8): H01L31/0232
CPCY02E10/50H01L31/02325
Inventor 郭小伟刘佳
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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