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Method for preparing saturable absorber device based on black phosphorus

A technology of saturable absorption and black phosphorus, which is applied to laser components, lasers, electrical components, etc., can solve the problems of not successfully making saturable absorbers, harsh growth conditions of black phosphorus, and inability to grow thin films, etc., to achieve Improve the success rate of preparation, avoid blind transfer, and improve the yield

Active Publication Date: 2015-08-12
南京科耐激光技术有限公司
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  • Abstract
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Problems solved by technology

However, so far, black phosphorus has not been successfully made into a saturable absorber and applied to fiber lasers
The main difficulties are: 1. Black phosphorus is unstable and easily denatured when exposed to the air; 2. The growth conditions of black phosphorus are far harsher than graphene, and it is currently impossible to grow large-area films by chemical vapor deposition like graphene , nanoscale black phosphorus flakes can only be obtained by mechanical stripping or liquid phase separation, and it is difficult to align and transfer them to the fiber core with a diameter of less than 10 μm

Method used

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  • Method for preparing saturable absorber device based on black phosphorus
  • Method for preparing saturable absorber device based on black phosphorus
  • Method for preparing saturable absorber device based on black phosphorus

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Embodiment Construction

[0030] The present invention will be described in detail below with reference to the accompanying drawings and in combination with embodiments.

[0031] A method for preparing a saturable absorber device based on black phosphorus, using directional transfer technology to deposit two-dimensional layered black phosphorus onto an optical fiber head, as a saturable absorber layer of the saturable absorber device.

[0032] As a new type of saturable absorber, black phosphorus can be used for laser Q-switching, mode-locking, optical signal processing or pulse shaping. It is a two-dimensional layered atomic crystal material with extremely high carrier mobility and excellent optical properties, which can achieve low unsaturated absorption loss and low saturated absorption intensity. The resonance absorption of black phosphorus can reach 20%~30%, which can realize broadband absorption. In addition, black phosphorus is a direct band gap material with a certain energy band gap. The band...

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Abstract

The invention discloses a method for preparing a saturable absorber device based on black phosphorus. According to the method, two-dimensional layered black phosphorus, which is obtained through a mechanical stripping method or which is distributed in alcoholic solution and obtained through ultrasonic concussion, is deposited on a fiber head through a directional transfer method to be used as the saturable absorbing layer of the device. The directional transfer method may effectively and high-efficiently transfer the black phosphorus to the fiber head, prevents damage to material in a manual transferring process, may accurately locate nanoscale material, prevents blind transfer, and improves a success rate of saturable absorber preparation. The black phosphorus saturable absorber prepared through the method provided by the invention employs a transmission mode, may achieve ultrashort pulse output of lasers in near-infrared and mid-infrared wavebands, has characteristics of good performance and compatibility, and is suitable for Q regulation and mode locking of lasers and optical signal processing.

Description

technical field [0001] The invention belongs to the field of saturable absorbers of pulsed lasers, and in particular relates to a method for preparing saturable absorbers used for Q-switching, mode-locking, optical signal processing and the like in lasers. Background technique [0002] At present, the saturable absorber device mainly used in the market is the semiconductor saturable absorber mirror (SESAM), but the semiconductor saturable absorber mirror has many shortcomings that are difficult to overcome. First, SESAM requires a complex and expensive clean room-based manufacturing system with complex manufacturing processes and high costs; second, due to the inherent bandgap of III-IV semiconductors, the saturated absorption spectrum is narrow and basically limited to the near-infrared band. 1. In the far-infrared band, there is currently no SESAM available; third, the optical damage threshold of SESAM is also very low, making it difficult to apply in the field of high-pow...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/098H01S3/11
Inventor 鲍桥梁李绍娟陈瑶沐浩然李鹏飞甘胜
Owner 南京科耐激光技术有限公司
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