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A kind of measuring device and measuring method of MOS tube well resistance

A technology of a MOS tube and measuring device, which is used in the field of measurement device in the MOS tube trap resistance.

Active Publication Date: 2017-10-24
FOUNDER MICROELECTRONICS INT
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] The technical problem to be solved by the present invention is to provide a measuring device and method for measuring the well resistance of a MOS tube, which can solve the problem of insufficient monitoring of the influence of fluctuations in the resistance of the P well resistance on the MOS tube during the manufacture of the existing MOS tube

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  • A kind of measuring device and measuring method of MOS tube well resistance
  • A kind of measuring device and measuring method of MOS tube well resistance
  • A kind of measuring device and measuring method of MOS tube well resistance

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Embodiment Construction

[0039] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.

[0040] The present invention aims at the problem of insufficient monitoring of the impact of fluctuations in the resistance of the P well resistance on the MOS tube during the manufacture of the existing MOS tube, and provides a measuring device for the well resistance of the MOS tube, wherein the device includes an RC oscillator and a frequency measurement unit and a calculation unit; the RC oscillator includes an RC circuit for controlling the oscillation frequency of the RC oscillator; the RC circuit includes a first resistance access terminal and a second resistance access terminal for connecting the MOS tube The two ends of the well resistance; the output terminal of the RC oscillator is connected to the input terminal of the frequency measureme...

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Abstract

The invention provides a measurement device and method for a well resistor of an MOS, applied to the technical field of MOS manufacture. The measurement device comprises an RC oscillator, a frequency measuring unit and a calculation unit. The RC oscillator comprises an RC circuit which controls the oscillation frequency of the RC oscillator, the RC circuit comprises a first resistor connection terminal and a second resistor connection terminal, the first resistor connection terminal and the second resistor connection terminal are connected to the two ends of the well resistor of the MOS respectively, and an output terminal of the RC oscillator is connected with an input terminal of the frequency measuring unit. The frequency measuring unit measures the oscillation frequency of the RC oscillator. The calculation unit calculates the resistance of the well resistor of the MOS according to the oscillation frequency measured by the frequency measuring unit. The resistance of the well resistor of the MOS is measured to monitor influence of resistance fluctuation of the well resistor on the MOS.

Description

technical field [0001] The invention relates to the technical field of semiconductor MOS tube manufacturing technology, in particular to a measuring device and a measuring method for MOS tube well resistance. Background technique [0002] The semiconductor low-voltage aluminum gate MOS process usually consists of four types of resistors, namely P+ resistors, N+ resistors, Nsub resistors and P well resistors. The latter two are generally defined as N- and P-. [0003] Among them, the P+ and N+ resistors are mostly required to form the source-drain structure of the MOS tube and the concentration requirements of the ohmic contact position. The resistance of the two resistors is small and the doping concentration is high. Generally, the N+ concentration is higher than the P+ concentration. This is mainly Taking into account the on-resistance of the MOS tube, the breakdown voltage of the PN junction and the requirements of the drive current. [0004] The resistance values ​​of N...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R27/02
Inventor 宋秀海
Owner FOUNDER MICROELECTRONICS INT
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